QST7TR ROHM

QST7 Transistors Low frequency amplifier QST7 External dimensions (Units : mm) Application Low frequency amplifier Driver 2.8 1.6 Features 1) A collector current is large. 2) VCE(sat) 370mV At IC = 1A / IB = 50mA Each lead has same dimensions Abbreviated symbol : T07 Equivalent circuit Absolute maximum ratings (Ta=25C) (6) (5) (4) Parameter Symbol Limits Unit Collector-base voltage VCBO 30 V VCEO 30 V Collector-emitter voltage Emitter-base voltage VEBO 6 V IC 1.5 A Collector current 1 ICP 3 A 2 (1) (2) (3) PC 500 mW Power dissipation Junction temperature Tj 150 C Range of storage temperature Tstg 55~+150 C 1 Single pulse, PW=1ms 2 Each Terminal Mounted on a Recommended Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO 30 V IC=10A BVCEO 30 V IC=1mA Collector-emitter breakdown voltage Emitter-base breakdown voltage BVEBO 6 V IE=10A ICBO 100 nA VCB=30V Collector cutoff current Emitter cutoff current IEBO 100 nA VEB=6V VCE(sat) 200 370 mV IC=1A, IB=50mA Collector-emitter saturation voltage DC current gain hFE 270 680 VCE=2V, IC=100mA fT 280 MHz Transition frequency VCE=2V, IE=100mA, f=100MHz Cob 13 pF VCB=10V, IE=0A, f=1MHz Collector output capacitance Pulsed 1/2 0.4 0.16 ( ) ( ) 3 2 (1) (4) (5) (6) 0.85 2.9QST7 Transistors Packaging specifications Package Taping Type Code TR Basic ordering unit (pieces) 3000 QST7 Electrical characteristic curves 1000 1 10 VCE=2V Ta=25C Ta=100C Pulsed Pulsed Ta=40C Ta=25C Ta=25C Ta=100C 1 VBE(sat) Ta=40C 100 0.1 0.1 IC/IB=50/1 IC/IB=10/1 Ta=100C IC/IB=20/1 Ta=25C 0.01 VCE(sat) Ta=40C IC/IB=20/1 Pulsed 10 0.01 0.001 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.1 DC current gain Fig.3 Collector-emitter saturation voltage Fig.2 Collector-emitter saturation voltage vs. collector current vs. collector current base-emitter saturation voltage vs. collector current 1 1000 1000 Ta=25C VCE=2V Ta=25C VCE=5V Pulsed VCE=2V IC/IB=20/1 f=100MHz tstg Ta=100C Ta=25C 0.1 100 tf Ta=40C 100 tdon 0.01 10 tr 0.001 10 1 0 0.5 1 1.5 0.01 0.1 1 10 0.01 0.1 1 10 BASE TO EMITTER CURRENT : VBE (V) EMITTER CURRENT : IE (A) COLLECTOR CURRENT : IC (A) Fig.4 Grounded emitter propagation Fig.5 Gain bandwidth product Fig.6 Switching time vs. emitter current characteristics 1000 Ta=25C IC=0A f=1MHz Cib 100 Cob 10 1 0.1 1 10 100 EMITTER TO BASE VOLTAGE : VEB(V) COLLECTOR TO BASE VOLTAGE : VCB(V) Fig.7 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage 2/2 EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR CURRENT : IC (A) DC CURRENT GAIN : hFE COLLECTOR OUTPUT CAPACITANCE : Cob (pF) BASE SATURATION VOLTAGE : VBE (sat) (V) TRANSITION FREQUENCY : fT (MHz) COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) SWITCHING TIME : (ns) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)