QST8 Datasheet Middle Power Transistor (-12V /-1.5A) llOutline Parameter Tr1 and Tr2 SOT-457T V -12V CEO SC-95 I -1.5A C TSMT6 llFeatures llInner circuit 1) Collector current is large. 2) Collector saturation voltage is low V -200mV CE(sat) at I = -500mA / I = -25mA C B llApplication LOW FREQUENCY AMPLIFIER llPackaging specifications Package Taping Reel size Tape width Quantity Part No. Package Marking size code (mm) (mm) (pcs) SOT-457T QST8 2928 TR 180 8 3000 T08 (TSMT6) www.rohm.com 1/6 20190527 - Rev.002 2019 ROHM Co., Ltd. All rights reserved. QST8 Datasheet llAbsolute maximum ratings (T = 25C) <It is the same ratings for the Tr1 and Tr2> a Parameter Symbol Values Unit V Collector-base voltage -15 V CBO V Collector-emitter voltage -12 V CEO V Emitter-base voltage -6 V EBO I -1.5 A C Collector current *1 I -3 A CP *2 P 0.5 W/Total D Power dissipation *3*4 P 1.25 W/Total D Junction temperature T 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) <It is the same characteristics for the Tr1 and Tr2> a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = -10A -15 - - V CBO C voltage Collector-emitter breakdown BV I = -1mA -12 - - V CEO C voltage Emitter-base breakdown voltage BV I = -10A -6 - - V EBO E Collector cut-off current I V = -15V - - -100 nA CBO CB Emitter cut-off current I V = -6V - - -100 nA EBO EB Collector-emitter saturation voltage V I = -500mA, I = -25mA - -85 -200 mV CE(sat) C B h DC current gain V = -2V, I = -200mA 270 - 680 - FE CE C V = -2V, I = 200mA, CE E f Transition frequency - 400 - MHz T f = 100MHz V = -10V, I = 0A, CB E C Output capacitance - 12 - pF ob f = 1MHz *1 Pw=1ms Single Pulse *2 Each terminal mounted on a reference land. *3 Mounted on a ceramic board(25250.8mm). *4 900mW per element must not be exceeded. www.rohm.com 2/6 20190527 - Rev.002 2019 ROHM Co., Ltd. All rights reserved.