Product Information

UJ3C065080B3

UJ3C065080B3 electronic component of UnitedSiC

Datasheet
MOSFET 650V/80mOhm, SiC, CASCODE, G3, D2PAK-3L

Manufacturer: UnitedSiC
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 17.81 ea
Line Total: USD 17.81

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Wed. 22 May to Fri. 24 May

MOQ : 1
Multiples : 1

Stock Image

UJ3C065080B3
UnitedSiC

1 : USD 8.7812
10 : USD 7.6221
25 : USD 7.27

0 - WHS 2


Ships to you between Thu. 16 May to Wed. 22 May

MOQ : 1
Multiples : 1

Stock Image

UJ3C065080B3
UnitedSiC

1 : USD 16.913
2 : USD 15.366
3 : USD 14.534
10 : USD 14.456
30 : USD 13.975

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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The UJ3C065080B3 is a high-performance Silicon Carbide (SiC) MOSFET manufactured by UnitedSiC. It features 650V drain-source breakdown voltage and 80mOhm maximum on-state resistance. It is a 3rd generation CASCODE (Complementary Application of Silicon Controlled Rectifier) MOSFET, constructed in a D2PAK-3L package. The CASCODE architecture enables higher currents, faster switching speeds, and increased efficiency compared to conventional MOSFETs of similar ratings. It is ideal for power conversion and control applications in medium-voltage industrial and renewable energy systems.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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