R8002ANX Nch 800V 2A Power MOSFET Datasheet Outline V 800V DSS TO-220FM R (Max.) 4.3 DS(on) I 2A D (3) P (2) 36W D (1) Features Inner circuit (2) 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain *1 3) Gate-source voltage (V ) guaranteed to be 30V. (3) Source GSS (1) 4) Drive circuits can be simple. *1 Body Diode 5) Parallel use is easy. (3) 6) Pb-free lead plating RoHS compliant Packaging specifications Packaging Bulk Reel size (mm) - Application Tape width (mm) - Switching Power Supply Type Basic ordering unit (pcs) 500 Taping code - Marking R8002ANX Absolute maximum ratings(T = 25C) a Parameter Symbol Value Unit Drain - Source voltage V 800 V DSS *1 T = 25C I 2 A c D Continuous drain current *1 T = 100C I 1 A c D *2 Pulsed drain current A I 8 D,pulse V Gate - Source voltage 30 V GSS *3 Avalanche energy, single pulse 0.265 mJ E AS *4 Avalanche energy, repetitive E 0.212 mJ AR *3 Avalanche current I 1 A AR Power dissipation (T = 25C) P 36 W c D T Junction temperature 150 C j Range of storage temperature T 55 to 150 C stg *5 Reverse diode dv/dt 15 V/ns dv/dt www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2016.02 - Rev.C 1/13 Not Recommended for New DesignsData Sheet R8002ANX Absolute maximum ratings Parameter Symbol Conditions Values Unit V = 480V, I = 2A DS D Drain - Source voltage slope dv/dt 50 V/ns T = 125C j Thermal resistance Values Parameter Symbol Unit Min. Typ. Max. R Thermal resistance, junction - case - - 3.41 C/W thJC Thermal resistance, junction - ambient R - -70 C/W thJA T Soldering temperature, wavesoldering for 10s - - 265 C sold Electrical characteristics(T = 25C) a Values Symbol Conditions Unit Parameter Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 800 - - V (BR)DSS GS D voltage Drain - Source avalanche V V = 0V, I = 2A - 900 - V (BR)DS GS D breakdown voltage V = 800V, V = 0V DS GS Zero gate voltage I T = 25C - 0.1 100 A DSS j drain current T = 125C - - 1000 j Gate - Source leakage current I V = 30V, V = 0V-n- A 100 GSS GS DS V V = 10V, I = 1mA Gate threshold voltage 3-V5 GS (th) DS D V = 10V, I = 1A GS D Static drain - source *6 T = 25C R - 3.3 4.3 j DS(on) on - state resistance T = 125C - 6.63 - j R Gate input resistance f = 1MHz, open drain - 5.9 - G www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2016.02 - Rev.C 2/13 Not Recommended for New Designs