Product Information

RCD100N20TL

RCD100N20TL electronic component of ROHM

Datasheet
Trans MOSFET N-CH 200V 10A Automotive 3-Pin(2+Tab) CPT T/R

Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

79: USD 0.4765 ea
Line Total: USD 37.64

1999 - Global Stock
Ships to you between
Thu. 09 May to Wed. 15 May
MOQ: 79  Multiples: 1
Pack Size: 1
Availability Price Quantity
2425 - WHS 1


Ships to you between Thu. 09 May to Wed. 15 May

MOQ : 90
Multiples : 1
90 : USD 1.0558
100 : USD 1.0212
250 : USD 0.9911
500 : USD 0.9713

1999 - WHS 2


Ships to you between Thu. 09 May to Wed. 15 May

MOQ : 79
Multiples : 1
79 : USD 0.4706
100 : USD 0.4608
200 : USD 0.4516

     
Manufacturer
Product Category
Packaging
Channel Mode
Mounting
Operating Temperature Classification
Operating Temp Range
Type
Rad Hardened
Pin Count
Gate-Source Voltage Max
Polarity
Drain-Source On-Volt
Package Type
Number Of Elements
Continuous Drain Current
Power Dissipation
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RCD100N20 Nch 200V 10A Power MOSFET Data Sheet l Outline V 200V DSS CPT3 (SC-63) R (Max.) 182mW DS(on) <SOT-428> I 10A D (1) (2) P (3) 20W D l l Features Inner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain (3) Source 3) Drive circuits can be simple. 4) Parallel use is easy. *1 BODY DIODE 5) Pb-free lead plating RoHS compliant 6) 100% Avalanche tested lPackaging specifications Packaging Taping Reel size (mm) 330 lApplication Tape width (mm) 16 Switching Power Supply Type Basic ordering unit (pcs) 2,500 Automotive Motor Drive Taping code TL Automotive Solenoid Drive Marking C10N20 lAbsolute maximum ratings (T = 25C) a Parameter Symbol Value Unit V Drain - Source voltage 200 V DSS *1 T = 25C I 10 A c D Continuous drain current *1 T = 100C A I 5.4 c D *2 Pulsed drain current I 40 A D,pulse Gate - Source voltage V V 30 GSS *3 Avalanche energy, single pulse E 7.35 mJ AS *3 Avalanche current I 5.0 A AS T = 25C P 20 W c D Power dissipation *4 P T = 25C 0.85 W D a Junction temperature T 150 C j T Range of storage temperature -55 to +150 C stg www.rohm.com 2014 ROHM Co., Ltd. All rights reserved. 2014.01 - Rev.B 1/12Data Sheet RCD100N20 lThermal resistance Values Parameter Symbol Unit Min. Typ. Max. R Thermal resistance, junction - case - - 6.25 C/W thJC *4 R - - 147 C/W Thermal resistance, junction - ambient thJA T Soldering temperature, wavesoldering for 10s - - 265 C sold lElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. V V = 0V, I = 1mA Drain - Source breakdown voltage 200 - - V (BR)DSS GS D V = 200V, V = 0V DS GS - - 10 T = 25C j Zero gate voltage I mA DSS drain current V = 200V, V = 0V DS GS - - 100 T = 125C j I V = 30V, V = 0V Gate - Source leakage current - - 100 nA GSS GS DS Gate threshold voltage V V = 10V, I = 1mA 3.25 - 5.25 V GS (th) DS D V = 10V, I = 5.0A - 140 182 GS D Static drain - source *5 V = 10V, I = 5.0A R mW GS D DS(on) on - state resistance - 280 365 T = 125C j g V = 10V, I = 5.0A Forward transfer admittance 2.1 4.2 - S fs DS D www.rohm.com 2014 ROHM Co., Ltd. All rights reserved. 2014.01 - Rev.B 2/12

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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