Product Information

RAL035P01TCR

Hot RAL035P01TCR electronic component of ROHM

Datasheet
ROHM Semiconductor MOSFET Trans MOSFET P-CH 12V 3.5A

Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

169: USD 0.2176 ea
Line Total: USD 36.77

34692 - Global Stock
Ships to you between
Wed. 15 May to Tue. 21 May
MOQ: 169  Multiples: 1
Pack Size: 1
Availability Price Quantity
2854 - WHS 1


Ships to you between
Wed. 22 May to Mon. 27 May

MOQ : 1
Multiples : 1
1 : USD 0.4211
10 : USD 0.3707
30 : USD 0.3506
100 : USD 0.3244
500 : USD 0.3122
1000 : USD 0.3043

2129 - WHS 2


Ships to you between Tue. 21 May to Thu. 23 May

MOQ : 1
Multiples : 1
1 : USD 0.4864
10 : USD 0.422
100 : USD 0.2967
500 : USD 0.2576
1000 : USD 0.2047
3000 : USD 0.1736
9000 : USD 0.1725
24000 : USD 0.169

34692 - WHS 3


Ships to you between Wed. 15 May to Tue. 21 May

MOQ : 169
Multiples : 1
169 : USD 0.2176
200 : USD 0.2162
500 : USD 0.1765
1000 : USD 0.1647
2000 : USD 0.1632
3000 : USD 0.1544
6000 : USD 0.1438
12000 : USD 0.1431

1822 - WHS 4


Ships to you between Wed. 15 May to Tue. 21 May

MOQ : 271
Multiples : 1
271 : USD 0.3313

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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RAL035P01 Datasheet Pch -12V -3.5A Small Signal MOSFET llOutline SOT-363T V -12V DSS TUMT6 R (Max.) 42m DS(on) I 3.5A D P 1.0W D llInner circuit llFeatures 1) Low on - resistance. 2) Small high power package 3) Low voltage drive (1.5V) llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Basic ordering unit (pcs) 3000 Taping code TR Marking SB llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V -12 V DSS I Continuous drain current 3.5 A D *1 I Pulsed drain current 12 A DP V Gate - Source voltage 0 -8 V GSS *2 P 1.0 W D Power dissipation *3 P 0.91 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 2016 ROHM Co., Ltd. All rights reserved. 20160610 - Rev.001 RAL035P01 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 125 /W thJA Thermal resistance, junction - ambient *3 R - - 137 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -12 - - V (BR)DSS GS D voltage V I = -1mA (BR)DSS D Breakdown voltage - -5.0 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = -12V, V = 0V - - -10 A DSS DS GS drain current I Gate - Source leakage current V = -8V, V = 0V - - -10 A GSS GS DS Gate threshold voltage V V = -6V, I = -1mA -0.3 - -1.0 V GS(th) DS D V I = -1mA GS(th) D Gate threshold voltage - 2.7 - mV/ temperature coefficient T referenced to 25 j V = -4.5V, I = -3.5A - 30 42 GS D V = -2.5V, I = -1.7A - 40 56 GS D Static drain - source *4 R m DS(on) on - state resistance V = -1.8V, I = -1.7A - 55 82 GS D V = -1.5V, I = -0.7A - 75 150 GS D Gate resistance R f = 1MHz, open drain - 18.1 - G Forward Transfer *4 Y V = -6V, I = -3.5A 4 - - S fs DS D Admittance *1 Pw10s , Duty cycle 1% *2 Mounted on a ceramic board (30300.8mm) 2 *3 Mounted on a FR4 (25250.8mm,Cu pad:625mm ) *4 Pulsed www.rohm.com 2/11 20160610 - Rev.001 2016 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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