RB050LA-30TR ROHM

Schottky Barrier Diode RB050LA-30 Dimensions (Unit : mm) Land size figure(Unit : mm) Applications General rectification 2.0 0.20.15 2.60.2 0.1 Features 1)Small and thin power mold type.(PMDT) 2)Low IR 3)High reliability PMD Construction Silicon epitaxial planar Structure 1.50.2 0.950.1 ROHM : PMD Manufacture Date Taping specifications Unit : mm 2.00.05 1.550.1 4.00.1 0.250.05 0 1.550.1 0 4.00.1 2.70.1 1.250.1 Absolute maximum ratings Ta=25 Parameter Limits Symbol Unit Reverse voltage (repetitive) V 30 V RM V Reverse voltage (DC) 30 V R Average rectified forward current (*1) 3 Io A Forward current surge peak 60Hz 1cyc I 70 A FSM Junction temperature 150 Tj Storage temperature -55 to +150 Tstg (*1)Tc=105 max Mounting on epoxi board. 180Half sine wave Electrical characteristics Ta=25 Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage V - - 0.45 V I =3.0A F F Reverse current I - - 150 A V =30V R R www.rohm.com 2009.02 - Rev.B 1/3 2009 ROHM Co., Ltd. All rights reserved. 3.80.2 4.70.3 5.00.1 1.4 1.4 5.50.05 1.750.1 12.00.2 5.00.1 4.4RB050LA-30 Data Sheet Ta=150 10 1000000 10000 Ta=75 Ta=125 f=1MHz 100000 Ta=125 1 10000 Ta=75 1000 Ta=150 Ta=25 1000 Ta=-25 Ta=25 0.1 100 10 100 Ta=-25 0.01 1 0.1 10 0.001 0.01 0 5 10 15 20 25 30 0 100 200 300 400 500 600 0 5 10 15 20 25 30 REVERSE VOLTAGE:VR(V) FORWARD VOLTAGE VF(mV) REVERSE VOLTAGEVR(V) VF-IF CHARACTERISTICS VR-IR CHARACTERISTICS VR-Ct CHARACTERISTICS 440 1050 200 Ta=25 Ta=25 1040 Ta=25 180 VR=30V IF=3A f=1MHz 430 1030 160 n=30pcs VR=0V n=30pcs 1020 140 n=10pcs 420 120 1010 100 1000 410 80 990 AVE:18.82uA AVE:414.1mV 60 980 400 40 970 AVE:1012.1pF 20 960 0 390 950 VF DISPERSION MAP IR DISPERSION MAP Ct DISPERSION MAP 300 30 300 Ta=25 Ifsm 1cyc Ifsm 25 IF=0.5A 250 250 IR=1A 8.3ms 8.3ms Irr=0.25*IR 8.3ms 20 200 200 1cyc n=10pcs 150 15 150 AVE:214.0A 10 100 100 AVE:12.3ns 5 50 50 0 0 0 1 10 100 trr DISPERSION MAP NUMBER OF CYCLES IFSM DISPERSION MAP IFSM-CYCLE CHARACTERISTICS 3 500 1000 Mounted on epoxcy board Ifsm Rth(j-a) 400 t 100 2 D=1/2 300 Rth(j-c) 10 Sin(180) DC 200 IM=100mA IF=1A 1 1 100 time 1ms 300us 0 0.1 0 01 23 45 0.001 0.1 10 1000 0.1 1 10 100 TIME:t(s) TIME:t(ms) AVERAGE RECTIFIED Rth-t CHARACTERISTICS IFSM-t CHARACTERISTICS FORWARD CURRENT Io(A) Io-Pf CHARACTERISTICS www.rohm.com 2009.02 - Rev.B 2009 ROHM Co., Ltd. All rights reserved. 2/3 PEAK SURGE PEAK SURGE FORWARD CURRENT:IFSM(A) FORWARD VOLTAGE:VF(mV) FORWARD CURRENT:IF(A) FORWARD CURRENT:IFSM(A) REVERSE CURRENT:IR(uA) TRANSIENT RESERVE RECOVERY TIME:trr(ns) REVERSE CURRENT:IR(uA) THAERMAL IMPEDANCE:Rth ( /W) CAPACITANCE BETWEEN CAPACITANCE BETWEEN PEAK SURGE TERMINALS:Ct(pF) TERMINALS:Ct(pF) FORWARD POWER FORWARD CURRENT:IFSM(A) DISSIPATION:Pf(W)