RB060M-30TR ROHM

Data Sheet Schottky barrier diode RB060M-30 Applications Dimensions (Unit : mm) Land size figure (Unit : mm) General rectification 0.10.1 0.05 1.60.1 1.2 Features 1) Small power mold type.(PMDU) 2) Low IR 3) High reliability PMDU Construction 0.90.1 Silicon epitaxial planar Structure 0.80.1 ROHM : PMDU JEDEC :SOD-123 Manufacture Date Taping specifications (Unit : mm) 0.250.05 1.550.05 4.00.1 2.00.05 1.810.1 4.00.1 1.00.1 1.5MAX Absolute maximum ratings (Ta=25C) Parameter Limits Symbol Unit Reverse voltage (repetitive peak) V 30 V RM Reverse voltage (DC) V 30 V R Average rectified forward current Io 2 A Forward current surge peak (60Hz/1cyc) I 55 A FSM Junction temperature Tj 150 C Storage temperature Tstg 55 to 150 C (*1)Tc=65C MAX. Mounted on epoxy board. 180Half sine wave Electrical characteristics (Ta=25C) Parameter Conditions Symbol Min. Typ. Max. Unit V 1 0.32 0.4 0.45 V I =1.0A F F Forward voltage V 2 0.36 0.44 0.49 V I =2.0A F F Reverse current I V =30V -10 50 A R R C=200pF , R=0 ESD break down voltage ESD 7 - -kV forward and reverse : 1 time www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.04 - Rev.C 1/3 2.60.1 3.50.2 3.50.05 1.750.1 0.85 8.00.2 3.710.1 3.05Data Sheet RB060M-30 10 1000000 Ta=150 1000 Ta=125 Ta=75 f=1MHz 100000 Ta=125 1 10000 Ta=150 Ta=75 1000 Ta=25 0.1 100 100 Ta=25 10 Ta=-25 0.01 1 Ta=-25 0.1 0.01 10 0.001 0 100 200 300 400 500 600 0 5 10 15 20 25 30 0 5 10 15 20 25 30 REVERSE VOLTAGE:VR(V) FORWARD VOLTAGEVF(mV) REVERSE VOLTAGE VR(V) VR-Ct CHARACTERISTICS VF-IF CHARACTERISTICS VR-IR CHARACTERISTICS 400 100 470 390 Ta=25 90 Ta=25 IF=2A Ta=25 380 VR=30V 80 460 f=1MHz n=30pcs n=30pcs 370 70 VR=0V 360 n=10pcs AVE:374.4pF 60 450 350 50 340 40 440 330 30 320 AVE:449.1mV 20 430 AVE:7.26uA 310 10 300 0 420 VF DISPERSION MAP IR DISPERSION MAP Ct DISPERSION MAP 100 300 30 Ta=25 90 Ifsm 1cyc Ifsm IF=0.5A 250 25 80 IR=1A 8.3m 8.3m 70 Irr=0.25*IR 8.3ms 200 20 1cyc n=10pcs 60 50 15 150 AVE:68.2A 40 100 10 30 20 5 50 AVE:9.8ns 10 0 0 0 110 100 IFSM DISPERSION MAP trr DISPERSION MAP NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS Mounted on epoxy board 200 1000 3 IM=10mA IF=0.5A Ifsm Rth(j-a) t D=1/2 1ms 150 time 100 DC 300us 2 Sin( 180) Rth(j-c) 100 10 1 1 50 0.1 0 0 0.001 0.1 10 1000 110 100 01 23 45 TIME:t(ms) TIME:t(s) AVERAGE RECTIFIED IFSM-t CHARACTERISTICS Rth-t CHARACTERISTICS FORWARD CURRENTIo(A) Io-Pf CHARACTERISTICS www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.04 - Rev.C 2/3 PEAK SURGE PEAK SURGE FORWARD VOLTAGE:VF(mV) FORWARD CURRENT:IFSM(A) FORWARD CURRENT:IF(A) FORWARD CURRENT:IFSM(A) REVERSE CURRENT:IR(uA) TRANSIENT REVERSE CURRENT:IR(uA) REVERSE RECOVERY TIME:trr(ns) THAERMAL IMPEDANCE:Rth (/W) CAPACITANCE BETWEEN CAPACITANCE BETWEEN PEAK SURGE TERMINALS:Ct(pF) FORWARD POWER TERMINALS:Ct(pF) FORWARD CURRENT:IFSM(A) DISSIPATION:Pf(W)