RB095T-60 ROHM

Schottky Barrier Diode RB095T-60 Datasheet Application Dimensions (Unit : mm) Structure Switching power supply (1) (2) (3) Features 1) Cathode common type. (TO-220) 6 2) Low I R 3) High reliability Construction Silicon epitaxial planar ROHM : TO220FN 1 Manufacture Date Absolute maximum ratings (Ta = 25C) Parameter Symbol Limits Unit V 60 Reverse voltage (repetitive peak) V RM Reverse voltage (DC) V 60 V R Average rectified forward current (*1) Io 6 A I 100 Forward current surge peak (60Hz/1cyc) A FSM 150 Junction temperature Tj C Storage temperature Tstg 40 to 150 C (*1) Business frequencies, Rating of R-load, 1/2 Io per diode, Tc=130C Electrical characteristics (Ta= 25C) Parameter Conditions Symbol Min. Typ. Max. Unit V I =3A Forward voltage - - 0.58 V F F I V =60V Reverse current - - 300 A R R Thermal impedance - - 3.0 C/W junction to case jc www.rohm.com 2013 ROHM Co., Ltd. All rights reserved. 2013.02 - Rev.E 1/4 Not Recommended for New DesignsData Sheet RB095T-60 10 1000000 100000 Ta = 150 C Ta = 150 C 10000 Ta = 125 C 1 Ta = 125 C 1000 Ta = 75 C Ta = 75 C 100 Ta = 25 C 10 0.1 Ta = 25 C 1 Ta = 25 C 0.1 Ta = 25 C 0.01 0.01 0 100 200 300 400 500 600 700 800 0 1020 3040 5060 FORWARD VOLTAGE : V (mV) REVERSE VOLTAGE : V (V) F R V -I CHARACTERISTICS V -I CHARACTERISTICS F F R R 1000 550 f= 1MHz Ta=25 C I =3A F AVE : 532.4mV n=30pcs 540 100 530 520 10 510 500 1 0 5 10 15 20 25 30 REVERSE VOLTAGE : V (V) V DISPERSION MAP R F V -Ct CHARACTERISTICS R 800 200 Ta=25 C Ta=25 C 750 180 V =60V f=1MHz R n=30pcs V =0V 160 700 R n=10pcs 650 140 120 600 AVE : 514.4pF 550 100 500 80 60 450 AVE : 20.8 A 400 40 20 350 0 300 I DISPERSION MAP Ct DISPERSION MAP R www.rohm.com 2013 ROHM Co., Ltd. All rights reserved. 2013.02 - Rev.E 2/4 Not Recommended for New Designs CAPACITANCE BETWEEN REVERSE CURRENT : I ( A) FORWARD CURRENT : I (A) R F TERMINALS : Ct(pF) CAPACITANCE BETWEEN FORWARD VOLTAGE : V (mV) REVERSE CURRENT : I ( A) R F TERMINALS : Ct(pF)