RB162M-40TR ROHM

Schottky barrier diode Data Sheet RB162M-40 Dimensions(Unit : mm) Land size figure(Unit : mm) Applications General rectification 1.2 Features 1)Small power mold type.(PMDU) 2)Low I R 3)High reliability PMDU Construction Silicon epitaxial planer Structure Taping specifications(Unit : mm) 0.250.05 1.55 0.05 4.0 0.1 2 .0 0.0 5 4 .00 .1 1.00 .1 1.810.1 1.5 MAX Absolute maximum ratings(Ta=25C) Parameter Limits Symbol Unit Reverse voltage (repetitive) V 40 V RM Reverse voltage (DC) 40 V V R Average rectified forward current (*1) 1 Io A Forward current surge peak (60Hz / 1cyc) I 30 A FSM Junction temperature Tj 150 C Storage temperature 40 to 150 Tstg C (*1)Mounted on epoxy board. (Tc=100C MAX ) Electrical characteristics(Ta=25C) Parameter Conditions Symbol Min. Typ. Max. Unit Forward voltage V - - 0.55 V I =1A F F Reverse current I - - 100 A V =40V R R www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2015.09 - Rev.B 1/3 Not Recommended for New Designs 3.50.12 3.50.05 1.750.1 0.85 8.00.2 3.710.08 3.710.1 3.0 5Data Sheet RB162M-40 Ta=150 C 1000 10000 1000 f=1MHz Ta=150 C 1000 Ta=125C Ta=125 C 100 Ta=75C 100 100 10 Ta=-25 C Ta=25C 1 Ta=25 C 10 10 0.1 Ta=-25 C 0.01 Ta=75 C 0.001 1 1 0 102030 40 0 5 10 15 20 25 30 35 0 100 200 300 400 500 600 FORWARD VOLTAGE : V (mV) REVERSE VOLTAGE : V (V) REVERSE VOLTAGE : V (V) F R R V -I CHARACTERISTICS V -I CHARACTERISTICS V -Ct CHARACTERISTICS F F R R R 550 10 220 Ta=25 Ta=25 C Ta=25 C 9 IF=1A Ta=25 C f=1MHz I =1.0A n=F30pcs 210 V =40V R 540 8 n=20pcs n=30pcs n=30pcs 7 200 530 6 5 190 4 520 AVE : 2.0A 180 3 AVE : 181.3pF 510 AVE : 517.1mV 2 170 AVE:349.9mV 1 0 160 500 I DISPERSION MAP R Ct DISPERSION MAP V DISPERSION MAP F 200 30 Ta=25,80C 1000 I =0.5A F 25 Ifsm 1cyc I =1A R 150 Ifsm Irr=0.25*I R 20 8.3ms n=20pcs 8.3ms 8.3ms 1cyc 15 100 100 10 50 AVE : 68.8A 5 AVE : 7.8ns AVE : 10.2ns 0 0 10 25 C 80 C 110 100 I DISPERSION MAP FSM NUMBER OF CYCLES trr DISPERSION MAP I -CYCLE CHARACTERISTICS FSM On glass-epoxy board 200 1000 1 IM=10mA I =0.5A F D=1/2 0.9 Rth(j-a) DC 0.8 1ms Ifsm time 150 100 t 0.7 300 s 0.6 Sin(=180) Rth(j-c) 100 10 0.5 0.4 0.3 50 1 0.2 0.1 0 0 0.1 00.511.52 110 100 0.001 0.01 0.1 1 10 100 1000 TIME : t(ms) AVERAGE RECTIFIED TIME : t(s) I -t CHARACTERISTICS FORWARD CURRENT : Io(A) FSM Rth-t CHARACTERISTICS Io-Pf CHARACTERISTICS www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2015.09 - Rev.B 2/3 Not Recommended for New Designs PEAK SURGE PEAK SURGE FORWARD VOLTAGE : V (mV) FORWARD CURRENT : I (A) F FORWARD CURRENT : I (mA) FSM F FORWARD CURRENT : I (A) FSM TRANSIENT REVERSE CURRENT : I ( A) REVERSE CURRENT : I ( A) REVERSE RECOVERY TIME : trr(ns) R R THAERMAL IMPEDANCE : Rth (C/W) PEAK SURGE CAPACITANCE BETWEEN TERMINALS : CAPACITANCE BETWEEN TERMINALS : FORWARD POWER FORWARD CURRENT : I (A) Ct(pF) Ct(pF) FSM DISSIPATION : Pf(W)