RB215T-60 ROHM

Data Sheet Schottky barrier diode RB215T-60 Applications Dimensions (Unit : mm) Structure Switching power supply 4.50.3 0.1 2.80.2 10.00.3 0.1 0.1 (1) (2) (3) Features 1)Cathode common type.(TO-220) 2)Low IR 3)High reliability 1.2 Construcion Silicon epitaxal planar 1.3 0.8 (1) (2) (3) 0.70.1 2.60.5 0.05 ROHM : O220FN Manufacture Date Absolute maximum ratings(Ta=25C) Parameter Limits Symbol Unit Reverse voltage (repetitive peak) V 60 V RM Reverse voltage (DC) V 60 V R Average rectified forward current (*1) Io 20 A I 100 Forward current surge peak (60Hz/1cyc) (*1) A FSM Junction temperature 150 Tj C Storage temperature Tstg 40 to 150 C (*1)Business frequencies, Rating of R-load, 1/2 Io per diode, Ta=116 C Elecrical characteristic(Ta=25C) Parameter Conditions Symbol Min. Typ. Max. Unit Forward voltage V - - 0.58 V I =10A F F I Reverse current - - 600 A V =60V R R Thermal impedance - - 1.75 junction to case jc C/W www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.04 - Rev.C 1/3 Not Recommended for New Designs 5.00.2 8.00.2 12.00.2 13.5MIN 15.00.4 0.2 8.0RB215T-60 Data Sheet Electrical characteristics curves 10 1000000 10000 Ta=150 C Ta=125 C Ta=150 C f=1MHz 100000 Ta=125 C 1000 10000 1 Ta=75 C Ta=-25 C Ta=75C 1000 Ta=25 C Ta=25 C 100 100 0.1 10 Ta=-25 C 10 1 0.01 1 0.1 0 100 200 300 400 500 600 0 5 10 15 20 25 30 0 10 20 30405060 REVERSE VOLTAGE:V (V) FORWARD VOLTAGE:V (mV) REVERSE VOLTAGE:V (V) F R R V -I CHARACTERISTICS V -I CHARACTERISTICS V -Ct CHARACTERISTICS F F R R R 2000 540 1000 Ta=25 C Ta=25 C 900 Ta=25 C f=1MHz V =30V R 1900 I =10A V =0V 530 F 800 R n=30pcs n=30pcs n=10pcs 700 1800 520 600 500 1700 510 400 300 AVE:515.0mV AVE:140.7uA 500 200 1600 AVE:1704.1pF 100 490 0 1500 V DISPERSION MAP F I DISPERSION MAP Ct DISPERSION MAP R 30 1000 300 Ta=25 C I =0.5A F Ifsm 1cyc Ifsm 25 250 I =1A R Irr=0.25*I 8.3ms 8.3ms R 8.3ms 20 100 200 n=10pcs 1cyc 15 150 10 100 10 50 5 AVE:166.0A AVE:23.3ns 0 0 1 110 100 trr DISPERSION MAP NUMBER OF CYCLES I DISPERSION MAP FSM I -CYCLE CHARACTERISTICS FSM Mounted on epoxy board 1000 100 I =5A F 30 IM=100mA Ifsm time t D=1/2 DC 300us Rth(j-a) 1ms Sin( =180) 10 20 100 Rth(j-c) 1 10 0.1 10 0 0.001 0.01 0.1 1 10 100 1000 110 100 0 1020 3040 TIME:t(ms) TIME:t(s) AVERAGE RECTIFIED I -t CHARACTERISTICS Rth-t CHARACTERISTICS FORWARD CURRENT:Io(A) FSM Io-Pf CHARACTERISTICS www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.04 - Rev.C Not Recommended for New Designs PEAK SURGE PEAK SURGE FORWARD CURRENT:I (A) FSM FORWARD VOLTAGE:V (mV) FORWARD CURRENT:I (A) FORWARD CURRENT:I (A) F F FSM REVERSE CURRENT:I (uA) R TRANSIENT REVERSE CURRENT:I (uA) REVERSE RECOVERY TIME:trr(ns) R THAERMAL IMPEDANCE:Rth (C/W) CAPACITANCE BETWEEN PEAK SURGE CAPACITANCE BETWEEN FORWARD POWER TERMINALS:Ct(pF) FORWARD CURRENT:I (A) TERMINALS:Ct(pF) FSM DISSIPATION:Pf(W)