Product Information

RB218NS100FHTL

Name: RB218NS100FHTL
Brand: ROHM
SKU: RB218NS100FHTL_ROHM
Availability: OutOfStock
Rating: 5 (11 reviews)

RB218NS100FHTL electronic component of ROHM

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See Product Specifications
Datasheet

Schottky Diodes & Rectifiers 100V VR 10A 0.87 VF TO-263S(D2PAK);SC-83

Manufacturer: ROHM

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1000: USD 1.0429 ea
Line Total: USD 1042.9

0 - Global Stock

MOQ: 1000 Multiples: 1000
Pack Size: 1000

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - WHS 1 Ships to you between Fri. 31 May to Tue. 04 Jun MOQ : 1000 Multiples : 1000 RB218NS100FHTL ROHM	1000 : USD 0.9876

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Additional Infomation About Product

RB218NS100FH Schottky Barrier Diode (AEC-Q101 qualified) Data sheet Outline V 100 V R I 20 A o I 100 A FSM Features Inner Circuit High reliability Power mold type Cathode common dual type Super Low I R Application Packaging Specifications Switching power supply Packing Embossed Tape Reel Size(mm) 330 Taping Width(mm) 24 Structure Quantity(pcs) 1000 Silicon epitaxial planar Taping Code TL Marking RB218NS100 Absolute Maximum Ratings (T =25C unless otherwise specified) c Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage V Duty0.5 110 V RM Reverse voltage V Reverse direct voltage 100 V R 60Hz half sin waveformresistive load Average rectified forward current I 20 A o I /2 per diodeT =115Max. o c 60Hz half sin waveform Peak forward surge current I 100 A FSM non-repetitiveper diodeT =25 a Junction temperature T - 150 j Storage temperature T - -55 150 stg Attention www.rohm.com 1/6 2018- ROHM Co., Ltd. All rights reserved. 2019/05/27 Rev.003RB218NS100FH Data sheet Electrical Characteristics (T =25C unless otherwise specified) j Parameter Symbol Conditions Min. Typ. Max. Unit (1) V Forward voltage I =10A - - 0.87 V F F (1) I V =100V Reverse current - - 7 A R R Note (1) Value per diode Thermal Characteristics Parameter Symbol Min. Typ. Max. Unit Per diode - - 1.1 /W (1) (2) R Thermal Resistance (Junction to case) JC Per device - - 0.67 /W (1) (3) R Thermal Resistance (Junction to ambient) - - 55 /W JA Notes (1) Value is guaranteed by design. (2) Transient dual interface measurement (TDIM) method. (3) Mounted on 50 x 50 x 1.6mm FR4 boardsingle-sided copper35m thicknessreference footprint. Characteristic Curves www.rohm.com 2/6 2018- ROHM Co., Ltd. All rights reserved. 2019/05/27 Rev.003

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

ROHM may also be referenced as

LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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