Product Information

RB228NS100FHTL

RB228NS100FHTL electronic component of ROHM

Datasheet
Schottky Diodes & Rectifiers 100V Vr 30A Io SBD TO-263S(D2PAK) 5A
Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.7893 ea
Line Total: USD 2.79

586 - Global Stock
Ships to you between
Thu. 30 May to Mon. 03 Jun
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
543 - WHS 1


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1
1 : USD 1.6195
10 : USD 1.3829
100 : USD 1.1313
500 : USD 0.9693
1000 : USD 0.8447
2000 : USD 0.8359
5000 : USD 0.831
10000 : USD 0.8036
25000 : USD 0.7998

Read More Specifications

     
Manufacturer
Product Category
Mounting Style
Package / Case
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Maximum Operating Temperature
Qualification
Packaging
Diode Configuration
Repetitive Reverse Voltage Vrrm Max
Forward Current Ifav
Diode Case Style
No Of Pins
Forward Voltage Vf Max
Forward Surge Current Ifsm Max
Operating Temperature Max
Product Range
Svhc
Msl
Brand
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Vr - Reverse Voltage
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Additional Infomation About Product

RB228NS100FH Schottky Barrier Diode (AEC-Q101 qualified) Data sheet Outline V 100 V R I 30 A o I 100 A FSM Features Inner Circuit High reliability Power mold type Cathode common dual type Super Low I R Application Packaging Specifications Switching power supply Packing Embossed Tape Reel Size(mm) 330 Taping Width(mm) 24 Structure Quantity(pcs) 1000 Silicon epitaxial planar Taping Code TL Marking RB228NS100 Absolute Maximum Ratings (T =25C unless otherwise specified) c Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage V Duty0.5 110 V RM Reverse voltage V Reverse direct voltage 100 V R 60Hz half sin waveformresistive load Average rectified forward current I 30 A o I /2 per diodeT =83Max. o c 60Hz half sin waveform Peak forward surge current I 100 A FSM non-repetitiveper diodeT =25 a Junction temperature T - 150 j Storage temperature T - -40 150 stg Attention www.rohm.com 1/6 2018- ROHM Co., Ltd. All rights reserved. 2019/05/27 Rev.003RB228NS100FH Data sheet Electrical Characteristics (T =25C unless otherwise specified) j Parameter Symbol Conditions Min. Typ. Max. Unit (1) V Forward voltage I =5A - - 0.87 V F F (1) I V =100V Reverse current - - 5 A R R Note (1) Value per diode Thermal Characteristics Parameter Symbol Min. Typ. Max. Unit Per diode - - 1.4 /W (1) (2) R Thermal Resistance (Junction to case) JC Per device - - 0.85 /W (1) (3) R Thermal Resistance (Junction to ambient) - - 55 /W JA Notes (1) Value is guaranteed by design. (2) Transient dual interface measurement (TDIM) method. (3) Mounted on 50 x 50 x 1.6mm FR4 boardsingle-sided copper35m thicknessreference footprint. Characteristic Curves www.rohm.com 2/6 2018- ROHM Co., Ltd. All rights reserved. 2019/05/27 Rev.003

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

ROHM may also be referenced as

LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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