RB218NS200TL ROHM

RB218NS200 Schottky Barrier Diode Data sheet Outline V 200 V R I 20 A o I 100 A FSM Features Inner Circuit High reliability Power mold type Cathode common dual type Super Low I R Application Packaging Specifications Switching power supply Packing Embossed Tape Reel Size(mm) 330 Taping Width(mm) 24 Quantity(pcs) 1000 Structure Silicon epitaxial planar Taping Code TL Marking RB218NS200 Absolute Maximum Ratings (T =25C unless otherwise specified) c Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage V Duty0.5 200 V RM Reverse voltage V Reverse direct voltage 200 V R 60Hz half sin waveformresistive load Average rectified forward current I 20 A o I /2 per diodeT =115Max. o c 60Hz half sin waveform Peak forward surge current I 100 A FSM non-repetitiveper diodeT =25 a Junction temperature T - 150 j Storage temperature T - -55 150 stg Attention www.rohm.com 1/6 2019- ROHM Co., Ltd. All rights reserved. 2019/08/07 Rev.001RB218NS200 Data sheet Electrical Characteristics (T =25C unless otherwise specified) j Parameter Symbol Conditions Min. Typ. Max. Unit (1) V Forward voltage I =10A - - 0.88 V F F (1) I V =200V Reverse current - - 10 A R R Note (1) Value per diode Thermal Characteristics Parameter Symbol Min. Typ. Max. Unit Per diode - - 1.1 /W (1) (2) R Thermal Resistance (Junction to case) JC Per device - - 0.61 /W (1) (3) R Thermal Resistance (Junction to ambient) - - 55 /W JA Notes (1) Value is guaranteed by design. (2) Transient dual interface measurement (TDIM) method. (3) Mounted on 50 x 50 x 1.6mm FR4 boardsingle-sided copper35m thicknessreference footprint. Characteristic Curves www.rohm.com 2/6 2019- ROHM Co., Ltd. All rights reserved. 2019/08/07 Rev.001