RB500V-40TE-17 ROHM

RB500V-40 Diodes Shottky barrier diode RB500V-40 z Application z External dimensions (Unit : mm) z Lead size figure (Unit : mm) Low current rectification 1.250.1 0.10.1 0.05 0.9MIN. z Features 1) Ultra Small mold type. (UMD2) 2) Low IR 3) High reliability. UMD2 z Construction z Structure Silicon epitaxial planar 0.70.2 0.30.05 0.1 ROHM : UMD2 JEDEC : S0D-323 JEITA : SC-90/A dot (year week factory) z Taping dimensions (Unit : mm) 1.550.05 0.30.1 2.00.05 4.00.1 1.400.1 4.00.1 1.05 1.00.1 z Absolute maximum ratings (Ta=25C) Parameter Limits Symbol Unit Reverse voltage (repetitive peak) V 45 V RM Reverse voltage (DC) V 40 V R Average rectified forward current 100 Io mA Forward current surge peak 60Hz1cyc I 1 A FSM Junction temperature 125 Tj Storage temperature -40 to +125 Tstg z Electrical characteristics (Ta=25C) Parameter Conditions Symbol Min. Typ. Max. Unit Forward voltage V - - 0.45 V I =10mA F F Reverse current I V =10V -- 1 A R R Capacitance between terminals V =10V , f=1MHz Ct - 6.0 - pF R Rev.A 1/3 Not Recommended for New Designs 1.70.1 2.50.2 3.50.05 1.750.1 2.75 0.8MIN. 8.00.2 2.80.1 2.1RB500V-40 Diodes z Electrical characteristic curves (Ta=25C) 100 Ta=125 100 100 Ta=125 f=1MHz 10 Ta=75 10 Ta=75 1 Ta=25 Ta=25 1 10 0.1 Ta=-25 Ta=-25 0.1 0.01 1 0.01 0.001 010 20 30 0 100 200 300 400 500 600 700 800 010 20 30 VR(V) VF(mV) VR(V) FORWARD VOLTAGEVF(mV) REVERSE VOLTAGEVR(V) REVERSE VOLTAGE:VR(V) VF-IF CHARACTERISTICS VR-IR CHARACTERISTICS VR-Ct CHARACTERISTICS 20 400 1000 Ta=25 18 Ta=25 900 Ta=25 IF=10mA VR=10V f=1MHz 390 800 16 n=30pcs n=30pcs VR=10V 14 700 n=10pcs 12 380 600 500 10 370 400 8 6 300 AVE:88.62nA 360 200 4 AVE:5.81pF AVE:370.2mV 100 2 350 0 0 VF DISPERSION MAP IR DISPERSION MAP Ct DISPERSION MAP 20 15 15 Ifsm 1cyc Ifsm Ifsm t 15 8.3ms 8.3ms 8.3ms 10 10 1cyc 10 5 5 5 AVE:5.5A 0 0 0 cycle 0.1 1 10 100 0.1 1 10 100 t(ms) TIME:t(ms) NUMBER OF CYCLES IFSM DISRESION MAP IFSM-t CHARACTERISTICS IFSM-CYCLE CHARACTERISTICS 1000 0.1 0.003 Rth(j-a) DC D=1/2 0.08 100 0.002 Rth(j-c) 0.06 D=1/2 Mounted on epoxy board Sin(180) DC 0.04 IM=10mA IF=100mA 10 0.001 Sin(180) time 0.02 1ms 300us 1 0 0 0.001 0.1 10 1000 00.1 0.2 010 20 30 AVERAGE RECTIFIED TIME:t(s) REVERSE VOLTAGE:VR(V) FORWARD CURRENTIo(A) Rth-t CHARACTERISTICS VR-P CHARACTERISTICS R Io-Pf CHARACTERISTICS Rev.A 2/3 Not Recommended for New Designs PEAK SURGE FORWARD VOLTAGE:VF(mV) TRANSIENT FORWARD CURRENT:IFSM(A) FORWARD CURRENT:IF(mA) THAERMAL IMPEDANCE:Rth (/W) IF(mA) FORWARD POWER REVERSE CURRENT:IR(nA) DISSIPATION:Pf(W) PEAK SURGE REVERSE CURRENT:IR(nA) FORWARD CURRENT:IFSM(A) IR(uA) Ifsm(A) REVERSE POWER DISSIPATION:P (W) R CAPACITANCE BETWEEN CAPACITANCE BETWEEN PEAK SURGE FORWARD CURRENT:IFSM(A) TERMINALS:Ct(pF) TERMINALS:Ct(pF) Ct(pF) Ifsm(A)