RB520S-40TE61 ROHM

Data Sheet Schottky Barrier Diode RB520S-40 Applications Dimensions (Unit : mm) Land size figure (Unit : mm) Rectifying small power 0.80.05 0.120.05 0.8 Features 1)Ultra small mold type. (EMD2) 2)Low I R 3)High reliability EMD2 Construction Silicon epitaxial 0.30.05 0.60.1 Structure ROHM : EMD2 JEDEC :SOD-523 JEITA : SC-79 dot (year week factory) Taping specifications (Unit : mm) 0.20.05 1.50.05 4.00.1 2.00.05 1.55 0.05 0.2 0.5 0.950.06 4.00.1 2.00.05 0.900.05 Empty pocket 0.760.05 0.75 0.05 0 Absolute maximum ratings (Ta=25C) Parameter Limits Symbol Unit Reverse voltage (repetitive peak) V 40 V RM Reverse voltage (DC) V 40 V R Average rectified forward current Io 200 mA Forward current surge peak I 1 A FSM Junction temperature Tj 125 C Storage temperature -40 to +125 Tstg C Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions V - - 0.39 V I =10mA F F Forward voltage V - - 0.55 V I =100mA F F I -- 1 A =10V R V R Reverse current I -- 10 A V =40V R R www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.03 - Rev.E Not Recommended for New Designs 2.402.450.0.015 1.251.300.06.06 00 1.20.05 1.60.1 0.6 0.6 3.50.05 1.750.1 8.00.15 1.25 0.06 1.260.05 0 0 1.7RB520S-40 Data Sheet 100 1000 1000 Ta=125 Ta=125 f=1MH 100 100 Ta=75 Ta=75 10 10 1 Ta=25 Ta=25 1 10 0.1 Ta=-25 0.1 Ta=-25 0.01 0.01 0.001 0.001 1 0.0001 0 100 200 300 400 500 600 010 20 30 0 1020 3040 FORWARD VOLTAGEVF(mV) REVERSE VOLTAGE:VR(V) REVERSE VOLTAGEVR(V) VF-IF CHARACTERISTICS VR-Ct CHARACTERISTICS VR-IR CHARACTERISTICS 510 1000 50 Ta=25 Ta=25 Ta=25 900 45 VR=10V f=1MHz IF=100mA 500 800 n=30pcs 40 VR=0V n=30pcs 700 35 n=10pcs 490 600 30 500 25 480 400 20 AVE:491.2mV 300 AVE:67.0nA 15 AVE:23.2pF 470 200 10 100 5 460 0 0 VF DISPERSION MAP IR DISPERSION MAP Ct DISPERSION MAP 10 15 30 25 Ifsm 1cyc Ifsm Ifsm t 8.3ms 8.3ms 20 8.3ms 10 1cyc 15 5 AVE:5.60A 10 5 5 0 0 0 110 100 0.1 1 10 100 TIME:t(ms) NUMBER OF CYCLES IFSM DISPERSION MAP IFSM-t CHARACTERISTICS IFSM-CYCLE CHARACTERISTICS 10000 0.3 0.01 Mounted on epoxy board IM=1mA IF=200mA 0.008 D=1/2 time 1ms 1000 0.2 DC Rth(j-a) 300us 0.006 Sin(180) DC D=1/2 0.004 100 Rth(j-c) 0.1 180) Sin( 0.002 10 0 0 0.001 0.01 0.1 1 10 100 1000 0 0.1 0.2 0.3 0.4 0.5 0 10203040 TIME:t(s) REVERSE VOLTAGE:VR(V) AVERAGE RECTIFIED Rth-t CHARACTERISTICS FORWARD CURRENTIo(A) VR-P CHARACTERISTICS R Io-Pf CHARACTERISTICS www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.03 - Rev.E Not Recommended for New Designs PEAK SURGE FORWARD VOLTAGE:VF(mV) TRANSIENT FORWARD CURRENT:IFSM(A) FORWARD CURRENT:IF(mA) THAERMAL IMPEDANCE:Rth (/W) FORWARD POWER REVERSE CURRENT:IR(A) PEAK SURGE DISSIPATION:Pf(W) REVERSE CURRENT:IR(nA) FORWARD CURRENT:IFSM(A) REVERSE POWER DISSIPATION:P (W) R PEAK SURGE CAPACITANCE BETWEEN CAPACITANCE BETWEEN FORWARD CURRENT:IFSM(A) TERMINALS:Ct(pF) TERMINALS:Ct(pF)