Product Information

RB558VA150TR

RB558VA150TR electronic component of ROHM

Datasheet
Diode Schottky 150V 0.5A Automotive 2-Pin TUMD T/R
Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

476: USD 0.0773 ea
Line Total: USD 36.79

22138 - Global Stock
Ships to you between
Mon. 27 May to Fri. 31 May
MOQ: 476  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
22138 - WHS 1


Ships to you between Mon. 27 May to Fri. 31 May

MOQ : 586
Multiples : 1
586 : USD 0.0671
1000 : USD 0.0663
2000 : USD 0.0654
3000 : USD 0.0641

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Brand
LoadingGif

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Additional Infomation About Product

Data Sheet Schottky Barrier Diode RB558VA150 lApplications lExternal Dimensions(Unit : mm) lLand Size Figure(Unit : mm) General rectification 0.170.1 0.05 1.1 1.30.05 lFeatures 1)Small power mold type.(TUMD2) 2)High reliability 3)AEC-Q101 qualified TUMD2 lConstruction Silicon epitaxial lStructure 0.80.05 0.60.2 ROHM : TUMD2 0.1 Manufacture Date lTaping Dimensions(Unit : mm) 1.550.1 0.250.05 2.00.05 4.00.1 0 1.430.05 4.00.1 1.00.2 0 0.90.08 lAbsolute Maximum Ratings(Ta=25C) Parameter Symbol Limits Unit Reverse voltage (repetitive) V 150 V RM V Reverse voltage (DC) 150 V R Average rectified forward current (*1) 0.5 Io A Forward current surge peak (60Hz1cyc) I 3 A FSM Junction temperature Tj 150 C Storage temperature Tstg -55 to +150 C (*1)Mounting on epoxi board. 180Half sine wave lElectrical Characteristics(Ta=25C) Parameter Conditions Symbol Min. Typ. Max. Unit V I =0.5A Forward voltage - - 0.95 V F F Reverse current I 0.5 V =150V R - - mA R www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2012.08 - Rev.A 1/4 Not Recommended for New Designs 1.90.1 2.50.2 3.50.05 1.750.1 2.75 8.00.2 2.80.05 2.0 0.8 0.5 Data Sheet RB558VA150 1 100000 Ta = 150 C Ta = 150 C 10000 1000 0.1 Ta = 125 C Ta = 75 C Ta = 125 C Ta = 75 C 100 Ta = 25 C Ta = 25 C 0.01 10 Ta = -25 C 1 Ta = -25 C 0.001 0.1 200 400 600 800 1000 0 50 100 150 FORWARD VOLTAGE:V (mV) REVERSE VOLTAGE:V (V) F R V -I CHARACTERISTICS V -I CHARACTERISTICS F F R R 100 830 f = 1MHz Ta=25 C V =0.5A F 825 n=30pcs 820 10 815 AVE : 805.1mV 810 805 1 800 0 5 10 15 20 25 30 REVERSE VOLTAGE:V (V) R V DISPERSION MAP F V -Ct CHARACTERISTICS R 50 30 Ta=25 C Ta=25 C f=1MHz V =150V R 45 25 n=30pcs V =0V R n=10pcs AVE : 15.2nA 40 20 35 15 10 30 AVE : 24.0pF 5 25 0 20 I DISPERSION MAP Ct DISPERSION MAP R www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2012.08 - Rev.A 2/4 Not Recommended for New Designs CAPACITANCE BETWEEN FORWARD CURRENT:I (A) REVERSE CURRENT:I (nA) R F TERMINALS:Ct(pF) CAPACITANCE BETWEEN FORWARD VOLTAGE:V (mV) F TERMINALS:Ct(pF) REVERSE CURRENT:I (nA) R

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

ROHM may also be referenced as

LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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