RBE1VA20ATR

Data Sheet Schottky Barrier Diode RBE1VA20A Applications Dimensions (Unit : mm) Land size figure (Unit : mm) General rectification 1.1 0.170.1 0.05 1.30.05 Features 1)Small mold type (TUMD2) 2)High reliability TUMD2 Structure 0.80.05 0.60.2 ROHM : TUMD2 0.1 dot (year week factory) Taping dimensions (Unit : mm) 1.550.1 0.250.05 2.00.05 4.00.1 0 4.00.1 1.00.2 1.430.05 0 0.90.08 Absolute maximum ratings (Tc=25 C) Parameter Limits Symbol Unit Reverse voltage (repetitive) V 30 V RM Reverse voltage (DC) V 20 V R Average rectified forward current Io 1 A Forward current surge peak (60Hz1cyc) I 3 A FSM Junction temperature 125 Tj C Storage temperature Tstg 40 to 125 C Electrical characteristics (Tj=25 C) Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage V - - 0.53 V I =1A F F Reverse current I - - 200 A V =20V R R www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.10 - Rev.A 1/4 Not Recommended for New Designs 1.90.1 2.50.2 3.50.05 1.750.1 2.75 8.00.2 2.80.05 2.0 0.8 0.5Data Sheet RBE1VA20A 100000 10 10000 Ta=125 C Ta=125 C 1 1000 Ta=75 C 100 Ta=75 C Ta=25 C 0.1 10 Ta=25 C Ta=-25 C 1 Ta= -25 C 0.01 0.1 0 100 200 300 400 500 600 700 0 5 10 15 20 25 30 FORWARD VOLTAGE V (mV) F REVERSE VOLTAGEV (V) R V -I CHARACTERISTICS F F V -I CHARACTERISTICS R R 100 475 f=1MHz 470 Ta=25 C I =1A F 465 n=30pcs 460 455 10 450 AVE:454.0mV 445 440 435 430 1 425 0 5 10 15 20 25 30 V DISPERSION MAP F REVERSE VOLTAGE:V (V) R V -Ct CHARACTERISTICS R 65 100 Ta=25 C Ta=25 C V =20V f=1MHz R 64 90 n=30pcs V =0V R n=10pcs AVE:62.8pF 80 63 AVE:83.23A 70 62 61 60 60 50 I DISPERSION MAP Ct DISPERSION MAP R www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.10 - Rev.A 2/4 Not Recommended for New Designs REVERSE CURRENT:I (A) CAPACITANCE BETWEEN R FORWARD CURRENT:I (A) F TERMINALS:Ct(pF) CAPACITANCE BETWEEN FORWARD VOLTAGE:V (mV) F REVERSE CURRENT:I ( mA) R TERMINALS:Ct(pF)