RBQ10B65ATL ROHM

Data Sheet Schottky Barrier Diode RBQ10B65A Applications Dimensions (Unit : mm) Land size figure (Unit : mm) General rectification 6.0 2.30.2 0.1 6.50.2 0.50.1 C0.5 5.10.2 0.1 Features 1.6 1.6 1)Power mold type. (CPD) 2)Low I R 3)High reliability 0.75 0.9 0.650.1 2.3 2.3 CPD 1 2 3 0.50.1 1.00.2 2.30.2 2.30.2 Construction Silicon epitaxial planer Structure ROHM : CPD JEITA : SC-63 Manufacture Date Taping specifications (Unit : mm) Absolute maximum ratings Tc=25C Parameter Symbol Limits Unit Reverse voltage (repetitive peak) V 65 V RM V Reverse voltage (DC) 65 V R Average rectified forward current (*1) 10 Io A Forward current surge peak 60Hz1cyc *2 I 50 A FSM Junction temperature 150 Tj C Storage temperature Tstg 40 to +150 C (*1) Business frequencies, 1/2 Io per diode. (*2) Per diode. Electrical characteristics Tj=25C Parameter Symbol Min. Typ. Max. Unit Conditions V Forward voltage - - 0.69 V I =5A F F I V =65V Reverse current - - 0.15 mA R R www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2012.01 - Rev.A 1/4 5.50.3 1.50.3 0.1 0.8 min 2.5 9.50.5 3.0 2.0 6.0 Data Sheet RBQ10B65A 10 100000 Ta=150C 10000 Ta=125C 1000 1 Ta=125C Ta=150C 100 10 Ta=75C Ta=75C 0.1 1 Ta=25C Ta=25C 0.1 Ta=25C Ta=25C 0.01 0.01 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 0 100 200 300 400 500 600 700 800 REVERSE VOLTAGEV (V) R FORWARD VOLTAGEV (mV) F V -I CHARACTERISTICS R R V -I CHARACTERISTICS F F 700 1000 690 f=1MHz Ta=25C I =5A F 680 n=30pcs 670 100 660 650 AVE:629.1mV 640 10 630 620 610 600 1 0 5 10 15 20 25 30 REVERSE VOLTAGE:V (V) V DISPERSION MAP F R V -Ct CHARACTERISTICS R 450 50 Ta=25C 440 Ta=25C f=1MHz V =65V R V =0V 40 430 R n=30pcs n=10pcs 420 AVE:396pF 30 410 400 390 20 AVE:12.57 A 380 370 10 360 0 350 Ct DISPERSION MAP I DISPERSION MAP R www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2/4 2012.01 - Rev.A REVERSE CURRENT:I ( A) CAPACITANCE BETWEEN TERMINALS:Ct(pF) R FORWARD CURRENT:I (A) F FORWARD VOLTAGE:V (mV) F REVERSE CURRENT:I ( A) R CAPACITANCE BETWEEN TERMINALS:Ct(pF)