RBQ30NS65AFHTL ROHM

RBQ30NS65AFH Schottky Barrier Diode (AEC-Q101 qualified) Data sheet Outline V 65 V R I 30 A o I 100 A FSM Features Inner Circuit High reliability Power mold type Cathode common dual type Low I R Application Packaging Specifications Switching power supply Packing Embossed Tape Reel Size(mm) 330 Taping Width(mm) 24 Structure Quantity(pcs) 1000 Silicon epitaxial planar Taping Code TL Marking BQ30NS65A Absolute Maximum Ratings (T =25C unless otherwise specified) c Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage V Duty0.5 65 V RM Reverse voltage V Reverse direct voltage 65 V R 60Hz half sin waveformresistive load Average rectified forward current I 30 A o I /2 per diodeT =80Max. o c 60Hz half sin waveform Peak forward surge current I 100 A FSM non-repetitiveper diodeT =25 a (1) Junction temperature T - 150 j Storage temperature T - -55 150 stg Note(1) To avoid occurrence of thermal runaway actual board is to be designed to fulfill dP /dT<1/R . d j JA Attention www.rohm.com 1/6 2018- ROHM Co., Ltd. All rights reserved. 2019/05/27 Rev.003RBQ30NS65AFH Data sheet Electrical Characteristics (T =25C unless otherwise specified) j Parameter Symbol Conditions Min. Typ. Max. Unit (1) V Forward voltage I =15A - 0.64 0.69 V F F I V =60V - 25 120 A R1 R (1) Reverse current I V =65V - 35 200 A R2 R Note (1) Value per diode Thermal Characteristics Parameter Symbol Min. Typ. Max. Unit Per diode - - 0.78 /W (1) (2) R Thermal Resistance (Junction to case) JC Per device - - 0.44 /W (1) (3) R Thermal Resistance (Junction to ambient) JA - - 55 /W Notes (1) Value is guaranteed by design. (2) Transient dual interface measurement (TDIM) method. (3) Mounted on 50 x 50 x 1.6mm FR4 boardsingle-sided copper35m thicknessreference footprint. Characteristic Curves www.rohm.com 2/6 2018- ROHM Co., Ltd. All rights reserved. 2019/05/27 Rev.003