RBQ30T65A ROHM

Anode Cathode Anode Schottky Barrier Diode RBQ30T65A Datasheet lApplication lDimensions (Unit : mm) lStructure General rectification 4.50.3 0.1 2.80.2 10.00.3 0.1 0.1 lFeatures 1) Cathode common type. 2) Low I R 3) High reliability 1 1.2 1.3 0.8 lConstruction (1) (2) (3) 0.70.1 2.60.5 Silicon epitaxial planar 0.05 ROHM TO220FN 1 Manufacture Date lAbsolute maximum ratings (Tc= 25C) Parameter Symbol Limits Unit V 65 Reverse voltage (repetitive) V RM Reverse voltage (DC) V 65 V R Average rectified forward current (*1) Io 30 A I 100 Forward current surge peak (60Hz1cyc) A FSM 150 Junction temperature Tj C Storage temperature Tstg -40 to +150 C (*1) Rating of per diode : Io/2 lElectrical characteristics (Tj = 25C) Parameter Conditions Symbol Min. Typ. Max. Unit V I =15A Forward voltage - - 0.69 V F F I V =65V Reverse current - - 450 mA R R www.rohm.com 2013 ROHM Co., Ltd. All rights reserved. 2013.06 - Rev.B 1/5 Not Recommended for New Designs 5.00.2 8.00.2 12.00.2 13.5MIN 15.00.4 0.2 8.0Data Sheet RBQ30T65A lElectrical characteristic curves 100 100000 Ta = 150 C 10000 10 Ta = 150 C Ta = 125 C 1000 Ta = 125 C 100 Ta = 75 C 1 Ta = 75 C 10 Ta = 25 C 1 Ta = 25 C 0.1 Ta = -25 C 0.1 Ta = -25 C 0.01 0.01 0 100 200 300 400 500 600 700 800 900 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 FORWARD VOLTAGE : V (mV) REVERSE VOLTAGE : V (V) F R V -I CHARACTERISTICS V -I CHARACTERISTICS F F R R 10000 700 f = 1MHz Ta=25 C 690 I =15A F 680 n=30pcs 1000 670 660 AVE : 645.4mV 100 650 640 630 10 620 610 1 600 0 5 10 15 20 25 30 REVERSE VOLTAGE : V (V) R V DISPERSION MAP F V -Ct CHARACTERISTICS R www.rohm.com 2013 ROHM Co., Ltd. All rights reserved. 2013.06 - Rev.B 2/5 Not Recommended for New Designs CAPACITANCE BETWEEN FORWARD CURRENT : I (A) F TERMINALS : Ct(pF) FORWARD VOLTAGE : V (mV) REVERSE CURRENT : I ( mA) F R