RBQ30T45ANZC9 ROHM

Anode Cathode Anode Schottky Barrier Diode RBQ30T45ANZ Data Sheet lApplication lDimensions (Unit : mm) lStructure 4.50.3 General rectification 0.1 2.80.2 10.00.3 0.1 0.1 lFeatures 1) Cathode common type. 2) Low I R 1 3) High reliability 1.2 1.3 0.8 lConstruction (1) (2) (3) 0.70.1 2.60.5 0.05 Silicon epitaxial planar ROHM TO220FN 1 Manufacture Date lPackage Dimensions (Unit : mm) 7 540 lAbsolute maximum ratings (Tc= 25C) Parameter Symbol Limits Unit Reverse voltage (repetitive) V 45 V RM V Reverse voltage (DC) 45 V R 30 Average rectified forward current (*1) Io A I 100 Forward current surge peak (60Hz1cyc) A FSM Junction temperature Tj 150 C Storage temperature Tstg -40 to +150 C (*1) Rating of per diode : Io/2 lElectrical characteristics (Tj = 25C) Parameter Symbol Min. Typ. Max. Unit Conditions V I =15A Forward voltage - - 0.65 V F F Reverse current I - - 450 V =45V mA R R www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2016.09 - Rev.A 1/5 34.5 5.00.2 8.00.2 12.00.2 13.5MIN 15.00.4 0.2 8.0Data Sheet RBQ30T45ANZ lElectrical characteristic curves 100 100000 Ta = 150 C 10000 Ta = 150 C 10 1000 Ta = 125 C Ta = 125 C Ta = 75 C 100 Ta = 75 C 1 10 Ta = 25 C Ta = 25 C 1 0.1 Ta = -25 C 0.1 Ta = -25 C 0.01 0.01 0 100 200 300 400 500 600 700 800 0 10 20 30 40 50 FORWARD VOLTAGE : V (mV) REVERSE VOLTAGE : V (V) F R V -I CHARACTERISTICS V -I CHARACTERISTICS F F R R 10000 600 Ta=25 C f = 1MHz 590 I =15A F n=30pcs 580 AVE : 564.4mV 1000 570 560 100 550 540 530 10 520 510 500 1 0 5 10 15 20 25 30 REVERSE VOLTAGE : V (V) R V DISPERSION MAP F V -Ct CHARACTERISTICS R www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2016.09 - Rev.A 2/5 CAPACITANCE BETWEEN FORWARD CURRENT : I (A) F TERMINALS : Ct(pF) FORWARD VOLTAGE : V (mV) REVERSE CURRENT : I ( mA) F R