Product Information

RBR1MM60ATFTR

RBR1MM60ATFTR electronic component of ROHM

Datasheet
Schottky Diodes & Rectifiers 60V VR 1A 0.53V VF PMDU; SOD-123FL
Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.3779 ea
Line Total: USD 0.38

28670 - Global Stock
Ships to you between
Tue. 14 May to Thu. 16 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
30014 - WHS 1


Ships to you between Tue. 14 May to Thu. 16 May

MOQ : 1
Multiples : 1
1 : USD 0.3779
10 : USD 0.2669
100 : USD 0.1775
500 : USD 0.1642
1000 : USD 0.1195
3000 : USD 0.1062
9000 : USD 0.099
24000 : USD 0.099
45000 : USD 0.0942

Read More Specifications

     
Manufacturer
Product Category
Brand
Repetitive Reverse Voltage Vrrm Max
Forward Current Ifav
Diode Configuration
Diode Case Style
No. Of Pins
Forward Voltage Vf Max
Forward Surge Current Ifsm Max
Operating Temperature Max
Automotive Qualification Standard
Svhc
Semiconductor Technology
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Additional Infomation About Product

RBR1MM60ATF Schottky Barrier Diode (AEC-Q101 qualified) Data sheet Outline V 60 V R I 1 A o I 20 A FSM Features Inner Circuit High reliability Small power mold type Low V F Application Packaging Specifications General rectification Packing Embossed Tape Reel Size(mm) 180 Taping Width(mm) 8 Structure Quantity(pcs) 3000 Silicon epitaxial planar Taping Code TR Marking E9 Absolute Maximum Ratings (T =25C unless otherwise specified) c Parameter Symbol Conditions Limits Unit V Repetitive peak reverse voltage Duty0.5 60 V RM V Reverse voltage Reverse direct voltage 60 V R Glass epoxy mounted I 60Hz half sin waveformresistive load Average rectified forward current 1 A o T =120 Max. c 60Hz half sin waveformNon-repetitive I Peak forward surge current 20 A FSM one cycleT =25 a (1) T Junction temperature - 150 j T Storage temperature - -55 150 stg Note(1) To avoid occurrence of thermal runaway actual board is to be designed to fulfill dP /dT<1/R . d j th(j-a) (T =25C unless otherwise specified) Characteristics j Parameter Symbol Conditions Min. Typ. Max. Unit V Forward voltage I =1A - - 0.53 V F F Reverse current I V =60V - - 75 A R R Attention www.rohm.com 1/5 2016- ROHM Co., Ltd. All rights reserved. 2019/05/28 Rev.002RBR1MM60ATF Data sheet Characteristic Curves www.rohm.com 2/5 2016 ROHM Co., Ltd. All rights reserved. 2019/05/28 Rev.002

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

ROHM may also be referenced as

LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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