Product Information

RBR2MM60ATFTR

RBR2MM60ATFTR electronic component of ROHM

Datasheet
Schottky Diodes & Rectifiers 60V VR 2A 0.65V VF PMDU; SOD-123FL

Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.1307 ea
Line Total: USD 0.65

2279 - Global Stock
Ships to you between
Wed. 15 May to Mon. 20 May
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
2279 - WHS 1


Ships to you between
Wed. 15 May to Mon. 20 May

MOQ : 5
Multiples : 5
5 : USD 0.1307
50 : USD 0.1058
150 : USD 0.0936
500 : USD 0.0842
3000 : USD 0.0768
6000 : USD 0.0731

12945 - WHS 2


Ships to you between Tue. 14 May to Thu. 16 May

MOQ : 1
Multiples : 1
1 : USD 0.3876
10 : USD 0.3006
100 : USD 0.1836
500 : USD 0.1703
1000 : USD 0.122
3000 : USD 0.1099
9000 : USD 0.105
24000 : USD 0.1038
45000 : USD 0.099

     
Manufacturer
Product Category
Brand
Repetitive Reverse Voltage Vrrm Max
Forward Current Ifav
Diode Configuration
Diode Case Style
No. Of Pins
Forward Voltage Vf Max
Forward Surge Current Ifsm Max
Operating Temperature Max
Automotive Qualification Standard
Svhc
Semiconductor Technology
LoadingGif

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The RBR2MM60ATFTR is a Medium-Power IGBT (Insulated Gate Bipolar Transistor) from ROHM Semiconductor. It is a 600V, 8A device with a low on-state voltage and soft switching capability. It is suitable for a wide range of applications, including motor control, switching power supplies, and general DC/AC conversion. The IGBT has a maximum junction temperature of 150°C, an insulation distance of 8mm, and a turn-off time of 250ns. It also features over-current protection and short-circuit protection. The RBR2MM60ATFTR is designed for easy mounting on a printed circuit board and comes in a TO-220AB package.

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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