RE1C001ZPTL ROHM

RE1C001ZPTL electronic component of ROHM
RE1C001ZPTL ROHM
RE1C001ZPTL MOSFETs
RE1C001ZPTL  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of RE1C001ZPTL MOSFETs across the USA, India, Europe, Australia, and various other global locations. RE1C001ZPTL MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. RE1C001ZPTL
Manufacturer: ROHM
Category: MOSFETs
Description: P-Channel 20 V 100mA (Ta) 150mW (Ta) Surface Mount EMT3F (SOT-416FL)
Datasheet: RE1C001ZPTL Datasheet (PDF)
Price (USD)
10: USD 0.088 ea
Line Total: USD 0.88 
Availability : 5121
  
Ship by Tue. 19 Aug to Fri. 22 Aug
QtyUnit Price
10$ 0.088
100$ 0.0702
300$ 0.0614
3000$ 0.0321
6000$ 0.0285
9000$ 0.0267

Availability 7663
Ship by Fri. 08 Aug to Tue. 12 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.2425
10$ 0.1513
100$ 0.0792
500$ 0.0644
1000$ 0.055
3000$ 0.0418
6000$ 0.0396
9000$ 0.0363
24000$ 0.0341


Availability 5121
Ship by Tue. 19 Aug to Fri. 22 Aug
MOQ : 10
Multiples : 10
QtyUnit Price
10$ 0.088
100$ 0.0702
300$ 0.0614
3000$ 0.0321
6000$ 0.0285
9000$ 0.0267


Availability 1811
Ship by Fri. 08 Aug to Tue. 12 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.294
5$ 0.238
10$ 0.203
100$ 0.1036
404$ 0.0462

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Series
Brand
Configuration
Transistor Type
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the RE1C001ZPTL from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RE1C001ZPTL and other electronic components in the MOSFETs category and beyond.

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RE1C001ZP Datasheet Pch -20V -100mA Small Signal MOSFET llOutline SOT-416FL V -20V DSS SC-89 R (Max.) 3.8 DS(on) EMT3F I 100mA D P 150mW D llInner circuit llFeatures 1) Low voltage drive(1.2V) makes this device ideal for partable equipment. 2) Drive circuits can be simple. 3) Built-in G-S Protection Diode. llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Basic ordering unit (pcs) 3000 Taping code TL Marking RX llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V -20 V DSS I Continuous drain current 100 mA D *1 I Pulsed drain current 400 mA DP V Gate - Source voltage 10 V GSS *2 P Power dissipation 150 mW D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 1/10 20160727 - Rev.001 RE1C001ZP Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R Thermal resistance, junction - ambient - - 833 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -20 - - V (BR)DSS GS D voltage V I = -1mA (BR)DSS D Breakdown voltage - -21.9 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = -20V, V = 0V - - -1 A DSS DS GS drain current I Gate - Source leakage current V = 10V, V = 0V - - 10 A GSS GS DS V Gate threshold voltage V = -10V, I = -100A -0.3 - -1.0 V GS(th) DS D V I = -1mA GS(th) D Gate threshold voltage - 2.4 - mV/ temperature coefficient T referenced to 25 j V = -4.5V, I = -100mA - 2.5 3.8 GS D V = -2.5V, I = -50mA - 3.4 5.1 GS D V = -1.8V, I = -20mA - 4.8 8.2 GS D Static drain - source *3 R V = -1.5V, I = -10mA - 6.0 13.2 DS(on) GS D on - state resistance V = -1.2V, I = -1mA - 10.0 40.0 GS D V = -4.5V, I = -100mA GS D - 4.8 6.8 T = 125 j Forward Transfer *3 Y V = -10V, I = -100mA 120 - - mS fs DS D Admittance *1 Pw10s , Duty cycle 1% *2 Each terminal mounted on a reference land. *3 Pulsed www.rohm.com 2/10 20160727 - Rev.001 2016 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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