RF1001T2D ROHM

Fast recovery diodes Datasheet RF1001T2D Applications Dimensions (Unit : mm) Structure General rectification 4.50.3 0.1 2.80.2 10.00.3 0.1 0.1 Features (1) (2) (3) 1) Cathode common type. (TO-220) 2) Ultra Low VF 3) Very fast recovery 4) Low switching loss 1.2 1.3 Construction 0.8 Silicon epitaxial planar 0.70.1 (1) (2) (3) 0.05 2.60.5 ROHM : TO220FN Manufacture Date Absolute maximum ratings (Ta=25C) Parameter Limits Symbol Unit Reverse voltage (repetitive peak) V 200 V RM Reverse voltage (DC) V 200 V R Average rectified forward current (*1) 10 Io A Forward current surge peak (60Hz/1cyc) 80 I A FSM Junction temperature Tj 150 C Storage temoerature Tstg 55 to 150 C (*1)Business frequencies, Rating of R-load, Tc=126 C. 1/2 Io per diode Electrical characteristic (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage V - 0.87 0.93 V I =5A F F I Reverse current -0.01 10 A V =200V R R Reverse recovery time trr - 15 30 ns I =0.5A, I =1A, Irr=0.25*I F R R Thermal impedance Rt h( j- c) -- 2.5 C/W JUNCTION TO CASE www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2012.12 - Rev.E 1/4 Not Recommended for New Designs 5.00.2 8.00.2 12.00.2 13.5MIN 15.00.4 0.2 8.0Data Sheet RF1001T2D Electrical characteristics curves 10 10000 Ta=150 C Ta=150 C Ta=125 C Ta=25 C 1000 1 Ta=125 C Ta=75 C Ta=-25 C 100 Ta=75 C 0.1 Ta=25 C 10 Ta=-25 C 0.01 1 0.001 0.1 0 100 200 300 400 500 600 700 800 900100011001200 0 50 100 150 200 REVERSE VOLTAGE:V (V) FORWARD VOLTAGE:V (mV) R F V -I CHARACTERISTICS V -I CHARACTERISTICS R R F F 1000 890 f=1MHz Ta=25 C I =5A F 880 n=30pcs 100 870 860 10 850 AVE:857.4mV 840 1 0 5 10 15 20 25 30 V DISPERSION MAP REVERSE VOLTAGE:V (V) F R V -Ct CHARACTERISTICS R 100 200 Ta=25 C Ta=25 C 90 V =200V 195 R f=1MHz n=30pcs V =0V R 80 190 n=10pcs 70 185 60 180 50 175 40 170 30 165 AVE:174.9pF AVE:10.7nA 20 160 10 155 150 0 Ct DISPERSION MAP I DISPERSION MAP R www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2012.12 - Rev.E 2/4 Not Recommended for New Designs CAPACITANCE BETWEEN FORWARD CURRENT:I (A) F TERMINALS:Ct(pF) REVERSE CURRENT:I (nA) R CAPACITANCE BETWEEN REVERSE CURRENT:I (nA) R TERMINALS:Ct(pF) FORWARD VOLTAGE:V (mV) F