Product Information

RF501B2STL

RF501B2STL electronic component of ROHM

Datasheet
ROHM Semiconductor Rectifiers FAST 200V 5A

Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1


Multiples : 2500
N/A

Obsolete
0 - WHS 2

MOQ : 1
Multiples : 1
1 : USD 0.7623
10 : USD 0.6334
100 : USD 0.4089
1000 : USD 0.3271
2500 : USD 0.3171
5000 : USD 0.3171
10000 : USD 0.316
25000 : USD 0.2972
50000 : USD 0.2916
N/A

Obsolete
0 - WHS 3

MOQ : 123
Multiples : 1
123 : USD 0.8451
N/A

Obsolete
0 - WHS 4

MOQ : 104
Multiples : 104
104 : USD 0.7021
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Configuration
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Recovery Time
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Product
Brand
Factory Pack Quantity :
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Data Sheet Fast Recovery Diode RF501B2S Land size figure(Unit : mm) Applications Dimensions Unit : mm 6.0 General rectification Features 1.6 1.6 1) Power mold type.(CPD) 2) High reliability 3) Low V F CPD 4) Very fast recovery 2.3 2.3 5) Low switching loss Structure Construction (2) Silicon epitaxial planar (1) (3) Taping specifications(Unit : mm) Absolute maximum ratings(Ta=25C) Parameter Limits Symbol Unit Reverse voltage (repetitive peak) V 200 V RM Reverse voltage (DC) V 200 V R Average rectified forward current (*1) 5 Io A Forward current surge peak (60Hz / 1cyc)(*1) 40 I A FSM Junction temperature Tj 150 C Storage temperature Tstg 55 to 150 C (*1)Business frequencies, Rating of R-load, 1/2 Io per diode, Tc=128 C Electrical characteristics(Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage V - 0.86 0.92 V I =5A F F Reverse current I - 0.015 1 A V =200V R R I =0.5A,I =1A,Irr=0.25*I Reverse recovery time trr - 15 30 ns F R R www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.05 - Rev.G 1/3 3.0 2.0 6.0Data Sheet RF501B2S Electrical characteristic curves Ta=150 C 10000 Ta=125 C 1000 10 f=1MHz Ta=150 C 1000 1 Ta=75 C 100 Ta=125 C 100 Ta=25 C 0.1 Ta=25 C Ta=75 C 10 10 Ta=-25 C Ta=-25 C 0.01 1 0.1 1 0.001 0 100 200 300 400 500 600 700 800 900 1000 0 50 100 150 200 010 20 30 REVERSE VOLTAGE : V (V) REVERSE VOLTAGE : V (V) R R FORWARD VOLTAGE : V (mV) F V -I CHARACTERISTICS V -Ct CHARACTERISTICS R R R V -I CHARACTERISTICS F F 200 890 100 Ta=25 C Ta=25C Ta=25C 90 I =5A V =200V f=1MHz F R 190 880 n=30pcs V =0V n=30pcs 80 R n=10pcs 70 180 870 60 50 860 170 40 AVE : 74.9pF AVE : 10.7nA 30 850 160 20 AVE:856.6mV 10 840 150 0 V DISPERSION MAP F I DISPERSION MAP Ct DISPERSION MAP R 300 30 1000 Ta=25C Ifsm Ifsm 1cyc I =0.5A F 250 25 I =1A R 8.3ms 8.3ms Irr=0.25*I R 8.3ms 1cyc 100 20 200 n=10pcs 15 150 AVE : 88.0A 10 10 100 AVE : 14.5ns 5 50 1 0 0 110 100 I DISPERSION MAP trr DISPERSION MAP FSM NUMBER OF CYCLES I -CYCLE CHARACTERISTICS FSM www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.05 - Rev.G PEAK SURGE FORWARD CURRENT : I (A) FORWARD VOLTAGE : V (mV) FORWARD CURRENT : :I (A) FSM F F REVERSE CURRENT : I (nA) R REVERSE CURRENT : I (nA) REVERSE RECOVERY TIME : trr(ns) R PEAK SURGE CAPACITANCE BETWEEN TERMINALS:Ct(pF) FORWARD CURRENT : I (A) CAPACITANCE BETWEEN TERMINALS : Ct(pF) FSM

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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