Fast Recovery Diode RF101L4S Land size figure (Unit : mm) Applications Dimensions (Unit : mm) General rectification 2.0 2.60.2 Features 1)Small power mold type. (PMDS) 2)Ultra low V F 886 6 3)Ultra high switching speed 0.10.02 4)Low switching loss 0.1 PMDS 2.00.2 1.50.2 Construction Silicon epitaxial planar Structure ROHM : PMDS JEDEC : SOD-106 Manufacture date Taping dimensions (Unit : mm) 2.00.05 4.00.1 1.550.05 0.3 1.55 2.90.1 4.00.1 2.8MAX Absolute maximum ratings (Ta=25C) Parameter Limits Symbol Unit Reverse voltage (repetitive) V 400 V RM Reverse voltage (DC) V 400 V R Average rectified forward current (*1) 1 Io A Forward current surge peak (60Hz1cyc) I 25 A FSM Junction temperature 150 Tj C Storage temperature Tstg 55 to 150 C (*1)Mounted on epoxy board. 180Half sine wave Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions V Forward voltage - - 1.25 V I =1.0A F F Reverse current I -- 10 AV =400V R R Reverse recovery time - - 25 ns I =0.5A,I =1A,Irr=0.25*I trr F R R www.rohm.com 1/3 2011.06 - Rev.B 2011 ROHM Co., Ltd. All rights reserved. 4.50.2 1.20.3 5.00.3 5.30.1 0.05 9.50.1 5.50.05 2.0 1.750.1 120.2 4.2Data Sheet RF101L4S Electrical characteristics curves 1 10000 100 f=1MHz Ta=150 Ta=125 1000 Ta=125 Ta=75 0.1 Ta=75 Ta=150 100 Ta=25 Ta=25 10 Ta=-25 10 Ta=-25 0.01 1 0.001 0.1 1 0 200 400 600 800 1000 1200 0 50 100 150 200 250 300 350 400 0 5 10 15 20 25 30 REVERSE VOLTAGE:VR(V) FORWARD VOLTAGEVF(mV) REVERSE VOLTAGEVR(V) VR-Ct CHARACTERISTICS VF-IF CHARACTERISTICS VR-IR CHARACTERISTICS 1300 500 100 450 Ta=25 Ta=25 90 Ta=25 IF=1A VR=400V f=1MHz 1200 400 80 n=30pcs n=30pcs VR=0V 350 70 n=10pcs AVE:41.8pF 1100 60 300 250 50 40 1000 200 30 150 AVE:24.8nA AVE:1007mV 20 900 100 10 50 0 800 0 VF DISPERSION MAP IR DISPERSION MAP Ct DISPERSION MAP 200 30 1000 Ta=25 1cyc Ifsm IF=0.5A 25 Ifsm IR=1A 150 Irr=0.25*IR 8.3ms 8.3ms 8.3ms 20 n=10pcs 100 1cyc 100 15 AVE:18.4ns AVE:48.0A 10 10 50 5 0 0 1 110 100 trr DISPERSION MAP IFSM DISRESION MAP NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS Mounted on epoxy board 1000 IM=10mA IF=100mA 3 1000 DC Ifsm 2.5 time 1m t Rth(j-a) D=1/2 100 300u 2 Sin(180) Rth(j-c) 100 1.5 10 1 1 0.5 10 0.1 0 1 10 100 0.001 0.01 0.1 1 10 100 1000 00.5 11.52 TIME:t(ms) TIME:t(s) IFSM-t CHARACTERISTICS Rth-t CHARACTERISTICS www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.06 - Rev.B PEAK SURGE PEAK SURGE FORWARD CURRENT:IFSM(A) FORWARD VOLTAGE:VF(mV) FORWARD CURRENT:IFSM(A) FORWARD CURRENT:IF(A) REVERSE CURRENT:IR(nA) REVERSE CURRENT:IR(nA) TRANSIENT REVERSE RECOVERY TIME:trr(ns) THAERMAL IMPEDANCE:Rth (/W) CAPACITANCE BETWEEN CAPACITANCE BETWEEN PEAK SURGE FORWARD POWER TERMINALS:Ct(pF) TERMINALS:Ct(pF) FORWARD CURRENT:IFSM(A) DISSIPATION:Pf(W)