Product Information

RF201L4STE25

RF201L4STE25 electronic component of ROHM

Datasheet
Rectifiers Fast Recovery Diodes
Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

130: USD 0.2839 ea
Line Total: USD 36.91

2900 - Global Stock
Ships to you between
Mon. 27 May to Fri. 31 May
MOQ: 130  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
2900 - WHS 1


Ships to you between Mon. 27 May to Fri. 31 May

MOQ : 136
Multiples : 1
136 : USD 0.2814
200 : USD 0.2799
500 : USD 0.2371
1000 : USD 0.231

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Configuration
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Recovery Time
Minimum Operating Temperature
Series
Packaging
Operating Temperature Range
Product
Brand
Factory Pack Quantity :
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Additional Infomation About Product

Data Sheet Super Fast Recovery Diode RF201L4S Series Dimensions (Unit : mm) Land size figure (Unit : mm) Standard Fast Recovery 2.0 2.60.2 Applications General rectification 6 6 7 2 0.10.02 0.1 PMDS 2.00.2 Features 1.50.2 1)Small power mold type. PMDS Structure 2)Low switching loss ROHM : PMDS 3)Low forward voltage JEDEC : SOD-106 Manufacture date Construction Silicon epitaxial planer Taping dimensions (Unit : mm) 2.00.05 4.00.1 0.3 1.550.05 1.55 2.90.1 4.00.1 2.8MAX Absolute maximum ratings (TI=25 C) Parameter Conditions Symbol Limits Unit Repetitive peak reverse voltage V D0.5 400 V RM Reverse voltage V Direct voltage 400 V R Glass epoxy substrate mounted Average rectified forward current Io Tl=108C 1.5 A R-road, 60Hz half sin wave 60Hz half sin wave, Non-repetitive I Forward current surge peak 50 A FSM one cycle peak value, Tj=25C Junction temperature Tj 150 C Storage temperature C Tstg 55 to 150 Electrical characteristics (Tj=25 C) Parameter Conditions Symbol Min. Typ. Max. Unit Forward voltage V I =1.5A 0.95 1.2 V F F V =400V Reverse current I 0.01 1 A R R Reverse recovery time I =0.5A,I =1A,Irr=0.25I trr 20 30 ns F R R Thermal resistance Rth(j-l) junction to lead 23 C/W www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.10 - Rev.A 1/4 4.50.2 1.20.3 5.00.3 5.30.1 0.05 9.50.1 2.0 5.50.05 1.750.1 120.2 4.2Data Sheet RF201L4S 100 10000 Tj=150 C Tj=150 C 1000 10 Tj=125 C Tj=125 C 100 1 Tj=75 C 10 Tj=75 C 0.1 Tj=25 C 1 Tj=25 C 0.1 0.01 0 100 200 300 400 0 500 1000 1500 2000 2500 3000 REVERSE VOLTAGE : V (V) R FORWARD VOLTAGE : V (mV) F V -I CHARACTERISTICS R R V -I CHARACTERISTICS F F 1100 1000 Tj=25 C f=1MHz I =1.5A F 1050 n=20pcs 100 1000 950 10 900 AVE:942.3mV 850 1 800 0 5 10 15 20 25 30 REVERSE VOLTAGE : V (V) R V DISPERSION MAP F V -Ct CHARACTERISTICS R 1000 150 Tj=25 C Tj=25 C 140 f=1MHz V =400V R V =0V n=20pcs R n=10pcs 130 100 120 110 100 AVE:114.6pF 10 90 AVE:9.6nA 80 1 70 I DISPERSION MAP Ct DISPERSION MAP R www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.10 - Rev.A 2/4 CAPACITANCE BETWEEN REVERSE CURRENT : I (nA) R TERMINALS:Ct(pF) FORWARD CURRENT : I (A) F CAPACITANCE BETWEEN FORWARD VOLTAGE : V (mV) REVERSE CURRENT : I (nA) F R TERMINALS:Ct(pF)

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

ROHM may also be referenced as

LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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