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RF305BM6SFHTL

RF305BM6SFHTL electronic component of ROHM
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See Product Specifications
Part No. RF305BM6SFHTL
Manufacturer: ROHM
Category: Rectifiers
Description: ROHM Semiconductor Silicon epitaxial planar type Fast Recovery Diode
Datasheet: RF305BM6SFHTL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.1496 ea
Line Total: USD 1.15

4085 - Global Stock
Ships to you between
Wed. 05 Jun to Fri. 07 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
4109 - WHS 1


Ships to you between Wed. 05 Jun to Fri. 07 Jun

MOQ : 1
Multiples : 1
1 : USD 0.9587
10 : USD 0.7354
100 : USD 0.623
500 : USD 0.553
1000 : USD 0.4625
2500 : USD 0.4432
5000 : USD 0.4432
10000 : USD 0.4262
25000 : USD 0.4141

     
Manufacturer
Product Category
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Type
Configuration
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Recovery Time
Maximum Operating Temperature
Series
Qualification
Packaging
Product
Brand
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
LoadingGif

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Super Fast Recovery Diode RF305BM6SFH Datasheet AEC-Q101 Qualified Series Dimensions (Unit : mm) Land Size Figure (Unit : mm) 6.0 Standard Fast Recovery Application 1.6 1.6 1 General rectification 2.3 2.3 TO-252 Cathode Features Structure ROHM : TO-252 1) Low switching loss JEITA : SC-63 1 2) Low forward voltage : Manufacture Date Open Anode Taping Dimensions (Unit : mm) Construction Silicon epitaxial planar type Absolute Maximum Ratings (T = 25C) c Parameter Symbol Conditions Limits Unit V Duty0.5 600 Repetitive peak reverse voltage V RM Reverse voltage V Direct voltage 600 V R Average rectified foward current I 60Hz half sin wave , Resistive load T =115C c 3 A o 60Hz half sin wave ,Non-repetitive at T=25C Forward current surge peak I 50 j A FSM Operating junction temperature T - 150 C j Storage temperature T - 55 to 150 C stg Electrical Characteristics (T = 25C) j Parameter Symbol Conditions Min. Typ. Max. Unit I =3A Forward voltage V -1.3 1.7 V F F I V =600V Reverse current -0.04 10 A R R I =0.5A, I =1A, Irr=0.25I Reverse recovery time trr - 20 30 ns F R R Thermal resistance R Junction to case -- 6.0 C / W th(j-c) www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2018.12 - Rev.C 1/4 3.0 2.0 6.0Datasheet RF305BM6SFH Electrical Characteristic Curves 100 100000 T = 150 C j T = 125 C j 10000 10 1000 T = 75 C T = 150 C j j 1 100 T = 125 C j T = 25 C j 10 T = 75 C j 0.1 1 T = 25 C j 0.01 0.1 0 50 100 150 200 0 500 1000 1500 2000 2500 3000 3500 FORWARD VOLTAGE : V (mV) REVERSE VOLTAGE : V (V) F R V -I CHARACTERISTICS V -I CHARACTERISTICS F F R R 1000 1000 f = 1MHz I FSM T = 25 C a 8.3ms 8.3ms 1cyc. 100 100 10 10 T = 25 C j 1 1 0 5 10 15 20 25 30 110 100 NUMBER OF CYCLES REVERSE VOLTAGE : V (V) R I -CYCLE CHARACTERISTICS V -C CHARACTERISTICS FSM R t www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2018.12 - Rev.C 2/4 CAPACITANCE BETWEEN FORWARD CURRENT : I (A) F TERMINALS : C (pF) t PEAK SURGE REVERSE CURRENT : I (nA) R FORWARD CURRENT : I (A) FSM

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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