X-On Electronics has gained recognition as a prominent supplier of RF4E070GNTR mosfet across the USA, India, Europe, Australia, and various other global locations. RF4E070GNTR mosfet are a product manufactured by ROHM. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

RF4E070GNTR

RF4E070GNTR electronic component of ROHM
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See Product Specifications
Part No.RF4E070GNTR
Manufacturer: ROHM
Category:MOSFET
Description: ROHM Semiconductor MOSFET 4.5V Drive Nch MOSFET
Datasheet: RF4E070GNTR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.4977 ea
Line Total: USD 0.5

Availability - 2996
Ships to you between
Wed. 05 Jun to Fri. 07 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2214 - WHS 1


Ships to you between Wed. 05 Jun to Fri. 07 Jun

MOQ : 1
Multiples : 1
1 : USD 0.4174
10 : USD 0.36
100 : USD 0.2541
500 : USD 0.2036
1000 : USD 0.1702
3000 : USD 0.1472
9000 : USD 0.1472
24000 : USD 0.1438
45000 : USD 0.1403

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Configuration
Series
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
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We proudly offer the RF4E070GNTR MOSFET at competitive prices in the United States, Australia, India, Europe and more. By maintaining strong relationships with manufacturers and optimizing our operations, we provide significant savings to our customers. Customer satisfaction is at the heart of our business. Our knowledgeable and friendly customer service team is always ready to assist you with any inquiries or issues. From product selection to after-sales support, we are dedicated to providing our customers with a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why we are the top choice for the RF4E070GNTR MOSFET.

RF4E070GN Datasheet Nch 30V 7A Middle Power MOSFET llOutline DFN2020-8S V 30V DSS R (Max.) 21.4m DS(on) HUML2020L8 I 7A D P 2.0W D llInner circuit llFeatures 1) Low on - resistance. 2) High power small mold package (HUML2020L8). 3) Pb-free lead plating RoHS compliant 4) Halogen free 5) 100% Rg and UIS tested. llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Basic ordering unit (pcs) 3000 Taping code TR Marking HE llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V 30 V DSS I Continuous drain current 7 A D *1 I Pulsed drain current 28 A DP V Gate - Source voltage 20 V GSS *2 I Avalanche current, single pulse 2.2 A AS *2 E Avalanche energy, single pulse 3.6 mJ AS *3 P Power dissipation 2.0 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 1/10 20160517 - Rev.001 RF4E070GN Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *3 R Thermal resistance, junction - ambient - - 62.5 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 30 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 28 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 30V, V = 0V - - 1 A DSS DS GS drain current I Gate - Source leakage current V = 20V, V = 0V - - 100 nA GSS GS DS V V = V , I = 250A Gate threshold voltage 1 - 2.5 V GS(th) DS GS D V I = 1mA GS(th) D Gate threshold voltage - -3.87 - mV/ temperature coefficient T referenced to 25 j V = 10V, I = 7A - 16.4 21.4 GS D Static drain - source *4 R m DS(on) on - state resistance V = 4.5V, I = 7A - 23.0 33.0 GS D R Gate resistance f=1MHz, open drain - 4.4 - G Forward Transfer *4 Y V = 5V, I = 7A 4 - - S fs DS D Admittance *1 Pw10s , Duty cycle 1% *2 L 1mH, V = 15V, R = 25, STARTING T = 25 Fig.3-1,3-2 DD G j *3 Mounted on a Cu Board (40400.8mm) *4 Pulsed www.rohm.com 2/10 20160517 - Rev.001 2016 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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