X-On Electronics has gained recognition as a prominent supplier of RFN10BM3SFHTL DIODES - GENERAL PURPOSE, POWER, SWITCHING across the USA, India, Europe, Australia, and various other global locations. RFN10BM3SFHTL DIODES - GENERAL PURPOSE, POWER, SWITCHING are a product manufactured by ROHM. We provide cost-effective solutions for DIODES - GENERAL PURPOSE, POWER, SWITCHING, ensuring timely deliveries around the world.

RFN10BM3SFHTL ROHM

RFN10BM3SFHTL electronic component of ROHM
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See Product Specifications
Part No.RFN10BM3SFHTL
Manufacturer: ROHM
Category: Diodes - General Purpose, Power, Switching
Description: Diodes - General Purpose, Power, Switching Silicon epitaxial planar type Fast Recovery Diode
Datasheet: RFN10BM3SFHTL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.2433 ea
Line Total: USD 1.24

Availability - 1976
Ships to you between
Wed. 26 Jun to Fri. 28 Jun
MOQ: 1  Multiples: 1
Pack Size: 1

RFN10BM3SFHTL More Buying Options & Price Grid(s)
Availability Price Quantity
1782 - WHS 1


Ships to you between Wed. 26 Jun to Fri. 28 Jun

MOQ : 1
Multiples : 1
1 : USD 1.0396
10 : USD 0.8016
100 : USD 0.6762
500 : USD 0.6003
1000 : USD 0.5026
2500 : USD 0.4612

Specifications

   
Manufacturer
Product Category
Product
Mounting Style
Package / Case
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Series
Qualification
Packaging
Brand
Cnhts
Hts Code
Operating Temperature Range
Mxhts
Factory Pack Quantity :
Subcategory
LoadingGif
 
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We are delighted to provide the RFN10BM3SFHTL from our Diodes - General Purpose, Power, Switching category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RFN10BM3SFHTL and other electronic components in the Diodes - General Purpose, Power, Switching category and beyond.

Additional Infomation About Product

Super Fast Recovery Diode RFN10BM3SFH Datasheet AEC-Q101 Qualified Series Dimensions (Unit : mm) Land Size Figure (Unit : mm) 6.0 Standard Fast Recovery Application 1.6 1.6 1 General rectification 2.3 2.3 TO-252 Features Cathode 1) Low switching loss Structure ROHM : TO-252 High current overload capacity 2) JEITA : SC-63 1 : Manufacture Date Anode Anode Construction Taping Dimensions (Unit : mm) Silicon epitaxial planar type Absolute Maximum Ratings (T = 25C) c Parameter Symbol Conditions Limits Unit V Duty0.5 350 Repetitive peak reverse voltage V RM Reverse voltage V Direct voltage 350 V R I 60Hz half sin wave , Resistive load T =34C Average rectified foward current c 10 A o () Forward current surge peak I 60Hz half sin wave ,Non-repetitive at T =25C 80 A FSM j T - 150 Operating junction temperature C j Storage temperature T - 55 to 150 C stg ( )1-3pin commom circuit Electrical Characteristics (T = 25C) j Parameter Conditions Symbol Min. Typ. Max. Unit I =10A Forward voltage V - 1.25 1.5 V F F I V =350V Reverse current -0.05 10 A R R I =0.5A, I =1A, Irr=0.25I Reverse recovery time trr - 22 30 ns F R R Thermal resistance R Junction to case -- 6.0 C / W th(j-c) www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2018.12 - Rev.D 1/4 3.0 2.0 6.0Datasheet RFN10BM3SFH Electrical characteristic curves 100000 100 T = 150 C j T = 125 C j 10000 10 1000 T = 75 C j T = 150 C j 100 1 T = 25 C j T = 125 C j 10 T = 75 C j 0.1 1 T = 25 C j 1-3pin common 0.1 0.01 0 50 100 150 200 250 300 350 0 500 1000 1500 2000 2500 FORWARD VOLTAGE : V (mV) REVERSE VOLTAGE : V (V) F R V -I CHARACTERISTICS V -I CHARACTERISTICS F F R R 1000 1000 T = 25 C f = 1MHz j T = 25 C 1-3pin common a 100 100 10 10 I FSM 8.3ms 8.3ms 1cyc. 1 1 0 5 10 15 20 25 30 110 100 NUMBER OF CYCLES REVERSE VOLTAGE : V (V) R I -CYCLE CHARACTERISTICS V -C CHARACTERISTICS FSM R t www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2018.12 - Rev.D 2/4 CAPACITANCE BETWEEN FORWARD CURRENT : I (A) F TERMINALS : C (pF) t PEAK SURGE REVERSE CURRENT : I (nA) R FORWARD CURRENT : I (A) FSM

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

LAPIS Semiconductor may also be referenced as

RHE
RHM
ROHM Semicon
ROHM Semiconductor

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