Product Information

RFN10NS6SFHTL

RFN10NS6SFHTL electronic component of ROHM

Datasheet
Diodes - General Purpose, Power, Switching Fast Recvry 600V Vr TO-263S 10A Io
Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.5335 ea
Line Total: USD 1.53

870 - Global Stock
Ships to you between
Fri. 24 May to Tue. 28 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
870 - WHS 1


Ships to you between Fri. 24 May to Tue. 28 May

MOQ : 1
Multiples : 1
1 : USD 1.5335
10 : USD 1.2679
100 : USD 1.0167
500 : USD 0.8863
1000 : USD 0.7414
2000 : USD 0.7088
5000 : USD 0.7088
10000 : USD 0.681

970 - WHS 2


Ships to you between Mon. 20 May to Fri. 24 May

MOQ : 76
Multiples : 1
76 : USD 1.3714
100 : USD 1.3268
250 : USD 1.3003

970 - WHS 3


Ships to you between Mon. 20 May to Fri. 24 May

MOQ : 76
Multiples : 1
76 : USD 1.3714
100 : USD 1.3268
250 : USD 1.3003

924 - WHS 4


Ships to you between Mon. 20 May to Fri. 24 May

MOQ : 41
Multiples : 1
41 : USD 0.9925
50 : USD 0.872
100 : USD 0.7677
200 : USD 0.7224

Read More Specifications

     
Manufacturer
Product Category
Product
Mounting Style
Package / Case
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Maximum Operating Temperature
Qualification
Packaging
Brand
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
LoadingGif

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Additional Infomation About Product

Data Sheet AEC-Q101 Qualified Super Fast Recovery Diode RFN10NS6SFH Serise Dimensions(Unit : mm) Land Size Figure(Unit : mm) Standard Fast Recovery Applications RFN10 NS6S General rectification Features LPDS 1)Low switching loss 2)High current overload capacity Structure ROHM : LPDS JEITA : TO263S Construction Manufacture Date Silicon epitaxial planer type Taping Dimensions(Unit : mm) Absolu e Maximum Ratings(Tc=25C) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage V Duty 0.5 600 V RM Reverse voltage V Direct voltage 600 V R Average rectified foward current 60Hz half sin wave , Resistive load Tc=91C 10 Io A (*1) Forward current surge peak I 100 60Hz half sin wave , Non-repetitive at Tj=25C A FSM Junction temperature 150 Tj C Storage temperature 55 to 150 Tstg C (*1) 1-3pin common circuit Electrical Characteristics(Tj=25C) Parameter Symbol Conditions Min. Typ. Max. Unit V I =10A Forward voltage F F 1.25 1.55 V V =600V Reverse current I 0.05 10 A R R I =0.5A,I =1A,Irr=0.25I Reverse recovery time trr 30 50 ns F R R Thermal resistance Rth(j-c) Junction to case 3.0 C/W ROHM COM WWW LL R IGHTS RESER ED V ,TD /(- O 2 1/4 2012.06 - Rev.A RFN10NS6SFH Data Sheet 100 100000 Tj=150 C 10000 Tj=125 C 10 Tj=150 C 1000 Tj=75 C Tj=125 C 100 Tj=75 C Tj=25 C 1 Tj=25 C 10 1 0.1 0 100 200 300 400 500 600 0 500 1000 1500 2000 2500 3000 FORWARD VOLTAGE:V (mV) REVERSE VOLTAGE:V (V) F R V -I CHARACTERISTICS V -I CHARACTERISTICS F F R R 1400 1000 I =10A F V =600V R 1350 Tj=25 C Tj=25 C 1300 100 1250 AVE:1261mV 1200 10 AVE:30.5nA 1150 1 1100 V DISPERSION MAP I DISPERSION MAP F R 1000 180 f=1MHz f=1MHz V =0V R 175 Tj=25 C 100 170 165 AVE:169pF 10 160 155 1 150 0 5 10 15 20 25 30 REVERSE VOLTAGE:V (V) R Ct DISPERSION MAP V -Ct CHARACTERISTICS R www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2012.06 - Rev.A 2/4 CAPACITANCE BETWEEN FORWARD VOLTAGE:V (mV) TERMINALS:Ct(pF) F FORWARD CURRENT:I (A) F CAPACITANCE BETWEEN TERMINALS:Ct(pF) REVERSE CURRENT:I (nA) REVERSE CURRENT:I (nA) R R

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

ROHM may also be referenced as

LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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