Product Information

RFN20NS3SFHTL

RFN20NS3SFHTL electronic component of ROHM

Datasheet
Diodes - General Purpose, Power, Switching Fast Recvry 350V Vr TO-263S 20A Io
Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.4701 ea
Line Total: USD 1.47

1836 - Global Stock
Ships to you between
Wed. 29 May to Fri. 31 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
1826 - WHS 1


Ships to you between Wed. 29 May to Fri. 31 May

MOQ : 1
Multiples : 1
1 : USD 1.4249
10 : USD 1.1048
100 : USD 0.9285
500 : USD 0.826
1000 : USD 0.6617
2000 : USD 0.6617
5000 : USD 0.6617
10000 : USD 0.6363
25000 : USD 0.6194

843 - WHS 2


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 62
Multiples : 1
62 : USD 1.7193
100 : USD 1.6849

998 - WHS 3


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 57
Multiples : 1
57 : USD 0.7307
100 : USD 0.7077
200 : USD 0.6935

Read More Specifications

     
Manufacturer
Product Category
Mounting Style
Package / Case
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Vf - Forward Voltage
Ir - Reverse Current
Maximum Operating Temperature
Series
Qualification
Packaging
Repetitive Reverse Voltage Vrrm Max
Forward Current If Av
Reverse Recovery Time Trr Max
Forward Surge Current Ifsm Max
No Of Pins
Svhc
Msl
Brand
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
LoadingGif

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Additional Infomation About Product

Data Sheet Super Fast Recovery Diode RFN20NS3S Serise Dimensions(Unit : mm) Land Size Figure(Unit : mm) Standard Fast Recovery RFN20 Applications NS3S General rectification Features LPDS 1)Low switching loss 2)High current overload capacity Structure ROHM : LPDS JEITA : TO263S Manufacture Date Construction Silicon epitaxial planer type Taping Dimensions(Unit : mm) Absolute Maximum Ratings(Tc=25C) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage V Duty 0.5 350 V RM Reverse voltage V Direct voltage 350 V R Average rectified foward current 60Hz half sin wave , Resistive load Tc=71C 20 Io A (*1) Forward current surge peak I 100 60Hz half sin wave , Non-repetitive at Tj=25C A FSM Junction temperature 150 Tj C Storage temperature 55 to 150 Tstg C (*1) 1-3pin common circuit Electrical Characteristics(Tj=25C) Parameter Symbol Conditions Min. Typ. Max. Unit V I =20A 1.1 1.35 Forward voltage F F V V =350V Reverse current I 0.05 10 A R R I =0.5A,I =1A,Irr=0.25I Reverse recovery time trr 25 35 ns F R R Thermal resistance Rth(j-c) Junction to case 2.5 C W ROHM COM WWW LL R IGHTS RESER ED V ,TD /(- O 2 1/4 2012.06 - Rev.A Data Sheet RFN20NS3S 100 100000 Tj=150 C 10000 Tj=125 C 10 1000 Tj=75 C Tj=150 C Tj=125 C 100 Tj=25 C 1 Tj=75 C 10 Tj=25 C 0.1 1 0 200 400 600 800 1000 1200 1400 1600 1800 0 50 100 150 200 250 300 350 FORWARD VOLTAGE:V (mV) REVERSE VOLTAGE:V (V) F R V -I CHARACTERISTICS V -I CHARACTERISTICS F F R R 1000 1140 I =20A V =350V F R Tj=25 C 1120 Tj=25 C 1100 100 1080 1060 AVE:33.0nA 10 AVE:1079mV 1040 1020 1 1000 V DISPERSION MAP I DISPERSION MAP F R 1000 450 f=1MHz f=1MHz 440 V =0V R Tj=25 C 430 420 100 410 400 390 AVE:412pF 10 380 370 360 350 1 0 5 10 15 20 25 30 Ct DISPERSION MAP REVERSE VOLTAGE:V (V) R V -Ct CHARACTERISTICS R www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2012.06 - Rev.A 2/4 CAPACITANCE BETWEEN FORWARD VOLTAGE:V (mV) TERMINALS:Ct(pF) F FORWARD CURRENT:I (A) F REVERSE CURRENT:I (nA) CAPACITANCE BETWEEN REVERSE CURRENT:I (nA) R R TERMINALS:Ct(pF)

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

ROHM may also be referenced as

LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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