Product Information

RFN20NS6SFHTL

RFN20NS6SFHTL electronic component of ROHM

Datasheet
Diodes - General Purpose, Power, Switching Fast Recvry 600V Vr TO-263S 20A Io
Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.8002 ea
Line Total: USD 1.8

970 - Global Stock
Ships to you between
Wed. 29 May to Fri. 31 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
970 - WHS 1


Ships to you between Wed. 29 May to Fri. 31 May

MOQ : 1
Multiples : 1
1 : USD 1.4973
10 : USD 1.2437
100 : USD 0.995
500 : USD 0.867
1000 : USD 0.8175
2000 : USD 0.6931
5000 : USD 0.6931
10000 : USD 0.6665

Read More Specifications

     
Manufacturer
Product Category
Mounting Style
Package / Case
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Vf - Forward Voltage
Ir - Reverse Current
Maximum Operating Temperature
Series
Qualification
Packaging
Repetitive Reverse Voltage Vrrm Max
Forward Current If Av
Reverse Recovery Time Trr Max
Forward Surge Current Ifsm Max
No Of Pins
Svhc
Msl
Brand
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
LoadingGif

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Additional Infomation About Product

Data Sheet Super Fast Recovery Diode RFN20NS6S Serise Dimensions(Unit : mm) Land Size Figure(Unit : mm) Standard Fast Recovery Applications RFN20 NS6S General rectification Features LPDS 1)Low switching loss 2)High current overload capacity Structure ROHM : LPDS JEITA : TO263S Construction Manufacture Date Silicon epitaxial planer type Taping Dimensions(Unit : mm) Absolute Maximum Ratings(Tc=25C) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage V Duty 0.5 600 V RM Reverse voltage V Direct voltage 600 V R Average rectified foward current 60Hz half sin wave , Resistive load Tc=47C 20 Io A (*1) Forward current surge peak I 100 60Hz half sin wave , Non-repetitive at Tj=25C A FSM Junction temperature 150 Tj C Storage temperature 55 to 150 Tstg C (*1) 1-3pin common circuit Electrical Characteristics(Tj=25C) Parameter Symbol Conditions Min. Typ. Max. Unit V I =20A 1.25 1.55 Forward voltage F F V V =600V Reverse current I 0.05 10 A R R I =0.5A,I =1A,Irr=0.25I Reverse recovery time trr 40 60 ns F R R Thermal resistance Rth(j-c) Junction to case 2.5 C/W ROHM COM WWW LL R IGHTS RESER ED V ,TD /(- O 2 1/4 2012.06 - Rev.A Data Sheet RFN20NS6S 100 100000 Tj=150 C 10000 Tj=125 C 10 1000 Tj=75 C Tj=150 C Tj=125 C 100 Tj=25 C 1 Tj=75 C 10 Tj=25 C 0.1 1 0 500 1000 1500 2000 2500 0 100 200 300 400 500 600 REVERSE VOLTAGE:V (V) FORWARD VOLTAGE:V (mV) R F V -I CHARACTERISTICS V -I CHARACTERISTICS R R F F 1000 1400 V =600V R I =20A F Tj=25 C Tj=25 C 1350 100 1300 1250 AVE:1281mV AVE:53.3nA 10 1200 1150 1 1100 I DISPERSION MAP V DISPERSION MAP R F 1000 350 f=1MHz f=1MHz 345 V =0V R Tj=25 C 340 335 100 330 325 320 10 315 AVE:322pF 310 305 300 1 0 5 10 15 20 25 30 Ct DISPERSION MAP REVERSE VOLTAGE:V (V) R V -Ct CHARACTERISTICS R www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2012.06 - Rev.A 2/4 CAPACITANCE BETWEEN TERMINALS:Ct(pF) FORWARD VOLTAGE:V (mV) F FORWARD CURRENT:I (A) F REVERSE CURRENT:I (nA) CAPACITANCE BETWEEN R TERMINALS:Ct(pF) REVERSE CURRENT:I (nA) R

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

ROHM may also be referenced as

LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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