Product Information

RFN5BM2SFHTL

RFN5BM2SFHTL electronic component of ROHM

Datasheet
Diodes - General Purpose, Power, Switching Fast Recvry 200V Vr TO-252(DPAK) 5A Io
Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.8165 ea
Line Total: USD 0.82

972 - Global Stock
Ships to you between
Tue. 28 May to Thu. 30 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
993 - WHS 1


Ships to you between Tue. 28 May to Thu. 30 May

MOQ : 1
Multiples : 1
1 : USD 0.8165
10 : USD 0.675
100 : USD 0.5417
500 : USD 0.4715
1000 : USD 0.4036
2500 : USD 0.3772
5000 : USD 0.3772
10000 : USD 0.3622

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Series
Qualification
Packaging
Brand
Operating Temperature Range
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
LoadingGif

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Additional Infomation About Product

Super Fast Recovery Diode RFN5BM2SFH Datasheet AEC-Q101 Qualified Series Dimensions (Unit : mm) Land Size Figure (Unit : mm) 6.0 Standard Fast Recovery Application 1.6 1.6 General rectification 1 2.3 2.3 TO-252 Cathode Features Structure ROHM : TO-252 1) Low switching loss JEITA : SC-63 2) Low forward voltage 1 : Manufacture Date Open Anode Taping Dimensions (Unit : mm) Construction Silicon epitaxial planar type Absolute Maximum Ratings (T = 25C) c Parameter Symbol Conditions Limits Unit V Duty0.5 200 Repetitive peak reverse voltage V RM Reverse voltage V Direct voltage 200 V R Average rectified foward current I 60Hz half sin wave , Resistive load T =114C 5 c A o 60Hz half sin wave ,Non-repetitive at T=25C Forward current surge peak I 40 j A FSM Operating junction temperature T - 150 C j Storage temperature T - 55 to 150 C stg Electrical Characteristics (T = 25C) j Parameter Symbol Conditions Min. Typ. Max. Unit I =5A Forward voltage V - 0.9 0.98 V F F I V =200V Reverse current -0.05 10 A R R I =0.5A, I =1A, Irr=0.25I Reverse recovery time trr - 13 25 ns F R R Thermal resistance R Junction to case -- 6.0 C / W th(j-c) www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2018.12 - Rev.C 1/4 3.0 2.0 6.0Datasheet RFN5BM2SFH Electrical Characteristic Curves 10000 100 T = 150 C j T = 125 C j 1000 10 T = 75 C j 100 1 T = 150 C j 10 T = 125 C j T = 25 C j T = 75 C 0.1 j 1 T = 25 C j 0.1 0.01 0 50 100 150 200 0 200 400 600 800 10001200140016001800 FORWARD VOLTAGE : V (mV) REVERSE VOLTAGE : V (V) F R V -I CHARACTERISTICS V -I CHARACTERISTICS F F R R 1000 1000 f = 1MHz I FSM T = 25 C a 8.3ms 8.3ms 1cyc. 100 100 10 10 TT = 25= 25 CC jj 1 1 0 5 10 15 20 25 30 110 100 NUMBER OF CYCLES REVERSE VOLTAGE : V (V) R I -CYCLE CHARACTERISTICS V -C CHARACTERISTICS FSM R t www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2018.12 - Rev.C 2/4 CAPACITANCE BETWEEN FORWARD CURRENT : I (A) F TERMINALS : C (pF) t PEAK SURGE REVERSE CURRENT : I (nA) R FORWARD CURRENT : I (A) FSM

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

ROHM may also be referenced as

LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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