RFN5TF8SC9 ROHM

Data Sheet Super Fast Recovery Diode RFN5TF8S Serise Dimensions(Unit : mm) Structure Standard Fast Recovery Applications General rectification RFN5 TF8S Features 1)Low switching Loss 2)High current overload capacity Construction Silicon epitaxial planer type ROHM : O220NFM Manufacture Year Manufacture Week Absolute Maximum Ratings(Tc=25C) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage V Duty 0.5 800 V RM Reverse voltage V Direct voltage 800 V R Average rectified foward current 60Hz half sin wave , Resistive load Tc=106C 5 Io A Forward current surge peak I 60Hz half sin wave , Non-repetitive at Tj=25C 60 A FSM Junction temperature 150 Tj C Storage temperature Tstg 55 to 150 C Electrical Characteristics(Tj=25C) Parameter Conditions Min. Typ. Max. Symbol Unit V I =5A 1.6 2.1 Forward voltage F V F V =800V Reverse current I 0.05 10 A R R I =0.5A,I =1A,Irr=0.25I Reverse recovery time trr 20 40 ns F R R Thermal resistance Rth(j-c) Junction to case 3.5 C/W ROHM COM WWW LL R IGHTS RESER ED V ,TD /(- O 2 1/4 2012.06 - Rev.A Data Sheet RFN5TF8S 100 100000 Tj=150 C 10000 Tj=125 C 10 1000 Tj=75 C Tj=150 C Tj=125 C Tj=25 C 100 Tj=75 C 1 Tj=25 C 10 1 0.1 0 200 400 600 800 0 500 1000 1500 2000 2500 3000 3500 FORWARD VOLTAGE:V (mV) F REVERSE VOLTAGE:V (V) R V -I CHARACTERISTICS F F V -I CHARACTERISTICS R R 1000 1800 V =800V R I =5A F 1750 Tj=25 C Tj=25 C 1700 1650 AVE:75.0nA 100 1600 1550 AVE:1593mV 1500 1450 1400 10 I DISPERSION MAP R V DISPERSION MAP F 1000 180 f=1MHz f=1MHz 175 V =0V R 170 Tj=25 C 165 100 160 AVE:142pF 155 150 145 10 140 135 130 125 1 120 0 5 10 15 20 25 30 REVERSE VOLTAGE:V (V) R Ct DISPERSION MAP V -Ct CHARACTERISTICS R www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2012.06 - Rev.A 2/4 CAPACITANCE BETWEEN FORWARD VOLTAGE:V (mV) TERMINALS:Ct(pF) F FORWARD CURRENT:I (A) F CAPACITANCE BETWEEN REVERSE CURRENT:I (nA) TERMINALS:Ct(pF) R REVERSE CURRENT:I (nA) R