X-On Electronics has gained recognition as a prominent supplier of RGS00TS65DHRC11 IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. RGS00TS65DHRC11 IGBT Transistors are a product manufactured by ROHM. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

RGS00TS65DHRC11 ROHM

Name: RGS00TS65DHRC11
Brand: ROHM
SKU: RGS00TS65DHRC11_ROHM
Availability: OutOfStock
Rating: 5 (11 reviews)

RGS00TS65DHRC11 electronic component of ROHM

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Part No.	RGS00TS65DHRC11
Manufacturer:	ROHM
Category:	IGBT Transistors
Description:	IGBT Transistors IGBT FieldStop Trnch 50A; TO-247N; 650V
Datasheet:	RGS00TS65DHRC11 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 6.1367 ea
Line Total: USD 6.14

Availability - 0

MOQ: 1 Multiples: 1
Pack Size: 1

RGS00TS65DHRC11 More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Tue. 13 May to Thu. 15 May MOQ : 1 Multiples : 1	1 : USD 6.1367 10 : USD 5.1127 30 : USD 4.8946 120 : USD 4.1405

0 Ship by Tue. 13 May to Thu. 15 May MOQ : 1 Multiples : 1	1 : USD 9.9869 3 : USD 6.6625 7 : USD 6.2961

We are delighted to provide the RGS00TS65DHRC11 from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RGS00TS65DHRC11 and other electronic components in the IGBT Transistors category and beyond.

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Additional Infomation About Product

RGS00TS65D 650V 50A Field Stop Trench IGBT Data Sheet lOutline TO-247N V 650V CES I 50A C(100C) V 1.65V CE(sat) (Typ.) P 326W (1)(2) (3) D lFeatures lInner Circuit 1) Low Collector - Emitter Saturation Voltage (2) 2) Short Circuit Withstand Time 8s (1) Gate (2) Collector *1 3) Qualified to AEC-Q101 (3) Emitter (1) 4) Built in Very Fast & Soft Recovery FRD *1 Built in FRD (3) 5) Pb - free Lead Plating RoHS Compliant lPackaging Specifications Packaging Tube lApplications General Inverter Reel Size (mm) - for Automotive and Industrial Use Tape Width (mm) - Type Basic Ordering Unit (pcs) 450 Packing Code C11 Marking RGS00TS65D lAbsolute Maximum Ratings (at T = 25C unless otherwise specified) C Parameter Symbol Value Unit V Collector - Emitter Voltage 650 V CES Gate - Emitter Voltage V V 30 GES T = 25C I 88 A C C Collector Current T = 100C I 50 A C C *1 Pulsed Collector Current 150 A I CP T = 25C I 56 A C F Diode Forward Current T = 100C I 30 A C F *1 Diode Pulsed Forward Current 150 A I FP T = 25C P 326 W C D Power Dissipation T = 100C P 163 W C D Operating Junction Temperature T C -40 to +175 j T Storage Temperature -55 to +175 C stg *1 Pulse width limited by T jmax. www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2016.07 - Rev.A 1/11Data Sheet RGS00TS65D lThermal Resistance Values Parameter Symbol Unit Min. Typ. Max. R Thermal Resistance IGBT Junction - Case - - 0.46 C/W (j-c) R Thermal Resistance Diode Junction - Case - - 1.17 C/W (j-c) lIGBT Electrical Characteristics (at T = 25C unless otherwise specified) j Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector - Emitter Breakdown BV I = 10A, V = 0V 650 - - V CES C GE Voltage V = 650V, V = 0V CE GE I T = 25C Collector Cut - off Current - - 10 A CES j T = 175C - - 5 mA j I V = 30V, V = 0V Gate - Emitter Leakage Current - - 200 nA GES GE CE Gate - Emitter Threshold V V = 5V, I = 2.5mA 5.0 6.0 7.0 V GE(th) CE C Voltage I = 50A, V = 15V C GE Collector - Emitter Saturation V T = 25C - 1.65 2.10 V CE(sat) j Voltage T = 175C - 2.15 - j www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2016.07 - Rev.A 2/11

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

LAPIS Semiconductor may also be referenced as

RHE
RHM
ROHM Semicon
ROHM Semiconductor

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