RGS00TS65HR 650V 50A Field Stop Trench IGBT Datasheet lOutline TO-247N V 650V CES I 50A C (100C) V 1.65V CE(sat) (Typ.) P (1) (2)(3) 326W D lInner Circuit (2) lFeatures (1) Gate (2) Collector 1) Low Collector - Emitter Saturation Voltage (3) Emitter (1) 2) Short Circuit Withstand Time 8s 3) Qualified to AEC-Q101 (3) 4) Pb - free Lead Plating RoHS Compliant lPackaging Specifications Packaging Tube lApplication Reel Size (mm) - Heater for Automotive Tape Width (mm) - Type Basic Ordering Unit (pcs) 450 Packing Code C11 Marking RGS00TS65 lAbsolute Maximum Ratings (at T = 25C unless otherwise specified) C Parameter Symbol Value Unit V Collector - Emitter Voltage 650 V CES V Gate - Emitter Voltage 30 V GES T = 25C I 88 A C C Collector Current T = 100C I 50 A C C *1 Pulsed Collector Current I 150 A CP T = 25C P 326 W C D Power Dissipation T = 100C P 163 W C D T Operating Junction Temperature -40 to +175 C j Storage Temperature T -55 to +175 C stg *1 Pulse width limited by T jmax. www.rohm.com 2019.02 - Rev.A 2019 ROHM Co., Ltd. All rights reserved. 1/9Datasheet RGS00TS65HR lThermal Resistance Values Parameter Symbol Unit Min. Typ. Max. R Thermal Resistance IGBT Junction - Case - - 0.46 C/W (j-c) lIGBT Electrical Characteristics (at T = 25C unless otherwise specified) j Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector - Emitter Breakdown BV I = 10A, V = 0V 650 - - V CES C GE Voltage V = 650V, V = 0V, CE GE I T = 25 Collector Cut - off Current - - 10 A CES j *2 - - 5 mA Tj = 175 Gate - Emitter Leakage I V = 30V, V = 0V - - 200 nA GES GE CE Current Gate - Emitter Threshold V V = 5V, I = 2.5mA 5.0 6.0 7.0 V GE(th) CE C Voltage I = 50A, V = 15V, C GE Collector - Emitter Saturation V T = 25C - 1.65 2.10 V CE(sat) j Voltage T = 175C - 2.15 - V j www.rohm.com 2019.02 - Rev.A 2019 ROHM Co., Ltd. All rights reserved. 2/9