Product Information

RGT16BM65DTL

RGT16BM65DTL electronic component of ROHM

Datasheet
IGBT Transistors ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.

Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.3895 ea
Line Total: USD 2.39

5981 - Global Stock
Ships to you between
Fri. 10 May to Tue. 14 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
6040 - Warehouse 1


Ships to you between Fri. 10 May to Tue. 14 May

MOQ : 1
Multiples : 1
1 : USD 2.0355
10 : USD 1.7365
100 : USD 1.426
250 : USD 1.334
500 : USD 1.219
1000 : USD 1.0672
2500 : USD 1.0557
5000 : USD 1.0488
10000 : USD 1.0246

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Package / Case
Packaging
Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Brand
Product Type
Factory Pack Quantity :
Subcategory
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RGT16BM65D 650V 8A Field Stop Trench IGBT Data Sheet lOutline TO-252 V 650V CES (2) I 8A C(100C) (1) V 1.65V CE(sat) (Typ.) (3) P 94W D lFeatures lInner Circuit 1) Low Collector - Emitter Saturation Voltage (2) 2) Low Switching Loss (1) Gate (2) Collector *1 3) Short Circuit Withstand Time 5s (3) Emitter (1) 4) Built in Very Fast & Soft Recovery FRD *1 Built in FRD (3) (RFN - Series) 5) Pb - free Lead Plating RoHS Compliant lPackaging Specifications Packaging Taping lApplications General Inverter Reel Size (mm) 330 UPS Tape Width (mm) 16 Type Power Conditioner Basic Ordering Unit (pcs) 2,500 Welder Packing Code TL Marking RGT16BM65D lAbsolute Maximum Ratings (at T = 25C unless otherwise specified) C Parameter Symbol Value Unit V Collector - Emitter Voltage 650 V CES Gate - Emitter Voltage V V 30 GES T = 25C I 16 A C C Collector Current T = 100C I 8 A C C *1 Pulsed Collector Current 24 A I CP T = 25C I 16 A C F Diode Forward Current T = 100C I 8 A C F *1 Diode Pulsed Forward Current 24 A I FP T = 25C P 94 W C D Power Dissipation T = 100C P 47 W C D Operating Junction Temperature T C -40 to +175 j T Storage Temperature -55 to +175 C stg *1 Pulse width limited by T jmax. www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2016.01 - Rev.A 1/11Data Sheet RGT16BM65D lThermal Resistance Values Parameter Symbol Unit Min. Typ. Max. R Thermal Resistance IGBT Junction - Case - - 1.58 C/W (j-c) R Thermal Resistance Diode Junction - Case - - 3.60 C/W (j-c) lIGBT Electrical Characteristics (at T = 25C unless otherwise specified) j Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector - Emitter Breakdown BV I = 10A, V = 0V 650 - - V CES C GE Voltage I V = 650V, V = 0V Collector Cut - off Current - - 10 A CES CE GE I Gate - Emitter Leakage Current V = 30V, V = 0V - - 200 nA GES GE CE Gate - Emitter Threshold V V = 5V, I = 5.5mA 5.0 6.0 7.0 V GE(th) CE C Voltage I = 8A, V = 15V C GE Collector - Emitter Saturation V T = 25C - 1.65 2.1 V CE(sat) j Voltage T = 175C - 2.15 - j www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2016.01 - Rev.A 2/11

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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