Product Information

RGTH60TS65DGC11

RGTH60TS65DGC11 electronic component of ROHM

Datasheet
ROHM Semiconductor IGBT Transistors
Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 4.2435 ea
Line Total: USD 4.24

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1
1 : USD 3.7375
10 : USD 3.2154
25 : USD 3.1205
100 : USD 2.6934
250 : USD 2.5984
450 : USD 2.4205
900 : USD 2.0883
5400 : USD 2.0645

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Packaging
Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Continuous Collector Current Ic Max
Brand
Operating Temperature Range
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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Additional Infomation About Product

RGTH60TS65D 650V 30A Field Stop Trench IGBT Datasheet Outline TO-247N V 650V CES I 30A C(100C) V 1.6V CE(sat) (Typ.) P 194W (1)(2)(3) D Features Inner Circuit 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate 2) High Speed Switching (2) Collector *1 3) Low Switching Loss & Soft Switching (3) Emitter (1) 4) Built in Very Fast & Soft Recovery FRD *1 Built in FRD (3) (RFN - Series) 5) Pb - free Lead Plating RoHS Compliant Packaging Specifications Packaging Tube Applications PFC Reel Size (mm) - UPS Tape Width (mm) - Type Power Conditioner Basic Ordering Unit (pcs) 450 IH Packing code C11 RGTH60TS65D Marking Absolute Maximum Ratings (at T = 25C unless otherwise specified) C Parameter Symbol Value Unit V Collector - Emitter Voltage 650 V CES V Gate - Emitter Voltage 30 V GES T = 25C I 58 A C C Collector Current T = 100C I 30 A C C *1 120 A Pulsed Collector Current I CP T = 25C I 40 A C F Diode Forward Current T = 100C I 20 A C F *1 Diode Pulsed Forward Current 120 A I FP T = 25C P 194 W C D Power Dissipation T = 100C P 97 W C D Operating Junction Temperature T C 40 to +175 j T Storage Temperature 55 to +175 C stg *1 Pulse width limited by T jmax. www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2015.10 - Rev.C 1/11Data Sheet RGTH60TS65D Thermal Resistance Values Parameter Symbol Unit Min. Typ. Max. R Thermal Resistance IGBT Junction - Case - - 0.77 C/W (j-c) R Thermal Resistance Diode Junction - Case - - 2.00 C/W (j-c) IGBT Electrical Characteristics (at T = 25C unless otherwise specified) j Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector - Emitter Breakdown BV I = 10A, V = 0V 650 - - V CES C GE Voltage I V = 650V, V = 0V Collector Cut - off Current -- 10 A CES CE GE I Gate - Emitter Leakage Current V = 30V, V = 0V -- 200 nA GES GE CE Gate - Emitter Threshold V V = 5V, I = 21.0mA 4.5 5.5 6.5 V GE(th) CE C Voltage I = 30A, V = 15V C GE Collector - Emitter Saturation V T = 25C - 1.6 2.1 V CE(sat) j Voltage T = 175C - 2.1 - j www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2015.10 - Rev.C 2/11

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

ROHM may also be referenced as

LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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