X-On Electronics has gained recognition as a prominent supplier of RGW50TK65DGVC11 IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. RGW50TK65DGVC11 IGBT Transistors are a product manufactured by ROHM. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

RGW50TK65DGVC11 ROHM

RGW50TK65DGVC11 electronic component of ROHM
RGW50TK65DGVC11 ROHM
RGW50TK65DGVC11 IGBT Transistors
RGW50TK65DGVC11 Semiconductors

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See Product Specifications
Part No. RGW50TK65DGVC11
Manufacturer: ROHM
Category: IGBT Transistors
Description: IGBT Transistors High-Speed Fast Switching Type, 650V 18A, TO-3PFM, Field Stop Trench IGBT
Datasheet: RGW50TK65DGVC11 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 4.3706 ea
Line Total: USD 4.37 
Availability - 434
Ship by Wed. 14 May to Fri. 16 May
MOQ: 1  Multiples: 1
Pack Size: 1

 RGW50TK65DGVC11 More Buying Options & Price Grid(s)

Availability Price Quantity
434
Ship by Wed. 14 May to Fri. 16 May
MOQ : 1
Multiples : 1
1 : USD 4.3706
25 : USD 3.1763

Specifications

   
Manufacturer
Product Category
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Package / Case
Packaging
Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Hts Code
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RGW50TK65DGVC11 from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RGW50TK65DGVC11 and other electronic components in the IGBT Transistors category and beyond.

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Additional Infomation About Product

RGW50TK65D Datasheet 650V 25A Field Stop Trench IGBT lOutline TO-3PFM V 650V CES I 18A C (100C) V 1.5V CE(sat) (Typ.) P 67W D (1) (2)(3) lFeatures lInner Circuit 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate 2) High Speed Switching (2) Collector *1 (3) Emitter 3) Low Switching Loss & Soft Switching (1) 4) Built in Very Fast & Soft Recovery FRD *1 Built in FRD (3) 5) Pb - free Lead Plating ; RoHS Compliant lApplication lPackaging Specifications PFC Packaging Tube UPS Reel Size (mm) - Welding Tape Width (mm) - Type Solar Inverter Basic Ordering Unit (pcs) 450 IH Packing Code C11 Marking RGW50TK65D lAbsolute Maximum Ratings (at T = 25C unless otherwise specified) C Parameter Symbol Value Unit V Collector - Emitter Voltage 650 V CES V Gate - Emitter Voltage 30 V GES T = 25C I 30 A C C Collector Current T = 100C I 18 A C C *1 Pulsed Collector Current I 100 A CP T = 25C I 27 A C F Diode Forward Current T = 100C I 16 A C F *1 Diode Pulsed Forward Current I 100 A FP T = 25C P 67 W C D Power Dissipation T = 100C P 33 W C D Operating Junction Temperature T -40 to +175 C j T Storage Temperature -55 to +175 C stg *1 Pulse width limited by T jmax. www.rohm.com 2020.11 - Rev.A 2020 ROHM Co., Ltd. All rights reserved. 1/11Datasheet RGW50TK65D lThermal Resistance Values Parameter Symbol Unit Min. Typ. Max. R Thermal Resistance IGBT Junction - Case - - 2.24 C/W (j-c) Thermal Resistance Diode Junction - Case R - - 2.79 C/W (j-c) lIGBT Electrical Characteristics (at T = 25C unless otherwise specified) j Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector - Emitter Breakdown BV I = 10A, V = 0V 650 - - V CES C GE Voltage Collector Cut - off Current I V = 650V, V = 0V - - 10 A CES CE GE Gate - Emitter Leakage I V = 30V, V = 0V - - 200 nA GES GE CE Current Gate - Emitter Threshold V V = 5V, I = 16.4mA 5.0 6.0 7.0 V GE(th) CE C Voltage I = 25A, V = 15V, C GE Collector - Emitter Saturation V T = 25C - 1.5 1.9 V CE(sat) j Voltage T = 175C - 1.85 - j www.rohm.com 2020.11 - Rev.A 2020 ROHM Co., Ltd. All rights reserved. 2/11

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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