RHU002N06FRAT106 ROHM

RHU002N06FRA Datasheet Nch 60V 200mA Small Signal MOSFET llOutline SOT-323 V 60V DSS SC-70 R (Max.) 2.4 DS(on) UMT3 I 200mA D P 200mW D llFeatures llInner circuit 1) Very fast switching 2) Pb-free lead plating RoHS compliant. 3) AEC-Q101 Qualified llApplication llPackaging specifications Embossed Switching Packing Tape Reel size (mm) 180 Tape width (mm) 8 Type Basic ordering unit (pcs) 3000 Taping code T106 Marking KP llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V 60 V DSS I Continuous drain current 200 mA D *1 I Pulsed drain current 800 mA DP Gate - Source voltage V 20 V GSS *2 P Power dissipation 200 mW D Junction temperature T 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/10 2016 ROHM Co., Ltd. All rights reserved. 20160905 - Rev.001 RHU002N06FRA Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R Thermal resistance, junction - ambient - - 625 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 60 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 66.1 - mV/ temperature coefficient T referenced to 25 j V = 60V, V = 0V DS GS - - 1 A Ta=25C Zero gate voltage I DSS drain current V = 60V, V = 0V DS GS - - 200 A Ta=125C I Gate - Source leakage current V = 20V, V = 0V - - 10 A GSS GS DS V Gate threshold voltage V = 10V, I = 1mA 1.0 - 2.5 V GS(th) DS D V I = 1mA GS(th) D Gate threshold voltage - -3.0 - mV/ temperature coefficient T referenced to 25 j V = 10V, I = 200mA - 1.7 2.4 GS D Static drain - source *3 R DS(on) on - state resistance V = 4V, I = 200mA - 2.8 4.0 GS D Forward Transfer *3 Y V = 10V, I = 200mA 100 - - mS fs DS D Admittance *1 Pw10s, Duty cycle 1% *2 Each terminal mounted on a reference land. *3 Pulsed www.rohm.com 2/10 20160905 - Rev.001 2016 ROHM Co., Ltd. All rights reserved.