X-On Electronics has gained recognition as a prominent supplier of RN142VTE-17 PIN Diodes across the USA, India, Europe, Australia, and various other global locations. RN142VTE-17 PIN Diodes are a product manufactured by ROHM. We provide cost-effective solutions for PIN Diodes, ensuring timely deliveries around the world.
We are delighted to provide the RN142VTE-17 from our PIN Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RN142VTE-17 and other electronic components in the PIN Diodes category and beyond.
RN142V Diodes PIN diode RN142V z Applications z External dimensions (Unit : mm) z Land size figure (Unit : mm) High frequency switching 1.250.1 0.10.1 0.05 0.9MIN. z Features 1) Small mold type. (UMD2) 2) Low high-frequency forward resistance / low capacitance (CT). UMD2 z Construction z Structure 0.70.2 Silicon epitaxial planar 0.30.05 0.1 ROHM : UMD2 JEDEC : S0D-323 JEITA : SC-90/A dot (year week factory) z Taping dimensions (Unit : mm) 1.550.05 0.30.1 2.00.05 4.00.1 1.400.1 4.00.1 1.05 1.00.1 z Absolute maximum ratings (Ta=25C) Parameter Limits Symbol Unit Reverse voltage V 60 V R Reverse current I 100 mA F Junction temperature Tj 150 Storage temperature -55 to +150 Tstg z Electrical characteristics (Ta=25C) Parameter Conditions Symbol Min. Typ. Max. Unit Forward voltage V -- 1 V I =10mA F F Reverse current I -- 0.1 A V =60V R R Capacitance between terminals Ct - - 0.45 pF V =1V , f=1MHz R High frequeny switching I =3mA,f=100MHz Rf - - 3 F 1/2 1.70.1 2.50.2 3.50.05 1.750.1 2.75 0.8MIN. 8.00.2 2.80.1 2.1RN142V Diodes z Electrical characteristic curves (Ta=25C) 10 100 1000 Ta=150 f=1MHz Ta=125 100 Ta=150 10 1 Ta=125 Ta=75 10 Ta=25 Ta=75 1 Ta=25 Ta=-25 1 0.1 Ta=-25 0.1 0.1 0.01 0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 010 20 30 0 10 2030 405060 70 80 FORWARD VOLTAGEVF(V) REVERSE VOLTAGEVR(V) REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS VF-IF CHARACTERISTICS VR-IR CHARACTERISTICS 1 850 100 Ta=25 Ta=25 VR=0V IF=10mA f=1MHz f=10MHz 840 n=30pcs 10 830 f=100MHz 820 1 810 AVE:825.4mV 0.1 0.1 800 0.1 1 10 1 10 100 1000 FORWARD CURRENT:IF(mA) FREQUENCY(MHz) VF DISPERSION MAP rf-IF CHARACTERISTICS Ct-f CHARACTERISTICS 1 10 2 Ta=25 Ta=25 Ta=25 9 0.9 1.9 f=1MHz f=100MHz VR=60V 8 0.8 VR=1V 1.8 IF=3mA n=30pcs n=10pcs n=10pcs 7 0.7 1.7 0.6 6 1.6 5 0.5 1.5 AVE:1.206 4 0.4 1.4 AVE:0.4448nA 3 0.3 1.3 0.2 2 1.2 AVE:0.364pF 1 0.1 1.1 0 0 1 FORWARD CURRENT:IF(mA) IR DISPERSION MAP Ct DISPERSION MAP rf DISPERSION MAP 1 5 Ta=25 0.9 f=100MHz 0.8 4 IF=10mA n=10pcs 0.7 AVE:2.01kV 0.6 3 0.5 0.4 2 AVE:0.71kV 0.3 0.2 1 AVE:0.639 0.1 C=200pF C=100pF 0 0 R=0 R=1.5k FORWARD CURRENT:IF(mA) ESD DISPERSION MAP rf DISPERSION MAP 2/2 FORWARD OPERATING FORWARD OPERATING FORWARD CURRENT:IF(mA) RESISTANCE:rf() REVERSE CURRENT:IR(nA) RESISTANCE:rf() CAPACITANCE BETWEEN CAPACITANCE BETWEEN REVERSE CURRENT:IR(nA) ELECTROSTATIC TERMINALS:Ct(pF) TERMINALS:Ct(pF) DISCHARGE TEST ESD(KV) FORWARD OPERATING FORWARD VOLTAGE:VF(mV) CAPACITANCE BETWEEN RESISTANCE:rf() TERMINALS:Ct(pF)