Product Information

MA4AGBLP912

Product Image X-ON

Datasheet
PIN Diodes .1-40GHz 5ns switching speed

Manufacturer: MACOM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

100: USD 6.2775 ea
Line Total: USD 627.75

0 - Global Stock
MOQ: 100  Multiples: 100
Pack Size: 100
Availability Price Quantity
0 - Global Stock


Ships to you between Wed. 14 Jun to Tue. 20 Jun

MOQ : 100
Multiples : 100
100 : USD 15.4453
300 : USD 14.2242
500 : USD 12.9692
1000 : USD 12.1852

0 - Global Stock


Ships to you between Tue. 20 Jun to Thu. 22 Jun

MOQ : 100
Multiples : 100
100 : USD 8.3695
200 : USD 7.9857
500 : USD 7.3666
1000 : USD 7.2429
2000 : USD 6.9952

0 - Global Stock


Ships to you between Wed. 14 Jun to Tue. 20 Jun

MOQ : 100
Multiples : 100
100 : USD 6.2775

     
Manufacturer
MACOM
Product Category
PIN Diodes
RoHS - XON
Y Icon ROHS
Vr - Reverse Voltage
40 V
Maximum Diode Capacitance
0.02 pF
Maximum Series Resistance @ Maximum IF
4 Ohms
If - Forward Current
10 mA
Vf - Forward Voltage
1.36 V
Minimum Operating Temperature
- 65 C
Maximum Operating Temperature
+ 125 C
Package / Case
BEAM LEAD DIE
Series
Smpp
Packaging
Waffle
Frequency Range
100 MHz to 40 GHz
Type
Pin Diodes
Brand
Macom
Carrier Life
5 Ns
Reverse Current Ir
50 nA
Factory Pack Quantity :
100
Cnhts
8542319000
Hts Code
8541100060
Mxhts
85411001
Product Type
Rf Switch Ics
Subcategory
Wireless & Rf Integrated Circuits
Taric
8541100000
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AlGaAs Beamlead PIN Diode MA4AGBLP912 Rev. V6 Features Low Series Resistance Low Capacitance 5 Nanosecond Switching Speed Can be Driven by a Buffered +5 V TTL Topside Silicon Nitride Passivation Polyimide Scratch Protection RoHS Compliant Applications Aerospace & Defense ISM Bottom Description The MA4AGBLP912 is an Aluminum-Gallium- Arsenide anode enhanced, beam lead PIN diode. AlGaAs anodes, which utilize MACOMs patented hetero-junction technology, produce less diode On resistance than conventional GaAs or silicon Outline devices. This device is fabricated in a OMCVD system using a process optimized for high device uniformity and extremely low parasitics. The result is a diode with low series resistance, 4 , low capacitance, 28 fF, and an extremely fast switching speed of 5nS. It is fully passivated with silicon nitride and has an additional polymer coating for scratch protection. The protective coating prevents damage to the junction and the anode air bridges during handling and assembly. The ultra low capacitance of the MA4AGBLP912 device makes it ideally suited for use up to 40 GHz when used in a shunt configuration. The low RC product and low profile of the beamlead PIN diode allows for use in microwave switch designs, where low insertion loss and high isolation are required. The operating bias conditions of +10 mA for the low loss state, and 0 V, for the isolation state permits the Outline Dimensions use of a simple +5 V TTL gate driver. AlGaAs, beamlead diodes, can be used in switching arrays INCHES MM on radar systems, high speed ECM circuits, optical Dim. switching networks, instrumentation, and other Min. Max. Min. Max. wideband multi-throw switch assemblies. A 0.009 0.013 0.2286 0.3302 B 0.0049 0.0089 0.1245 0.2261 C 0.0037 0.0057 0.0940 0.1448 Ordering Information D 0.0049 0.0089 0.1245 0.2261 Part Number Package E 0.002 0.006 0.0508 0.1524 MA4AGBLP912 Gel Pak F 0.0218 0.0278 0.5537 0.70612 11 1 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: h t t p s: //www.m a co m .co m /su p p o rt DC-0007014 AlGaAs Beamlead PIN Diode MA4AGBLP912 Rev. V6 Electrical Specifications: T = 25C A Parameter Test Conditions Units Min. Typ. Max. Total Capacitance -5 V / 1 MHz fF 26 30 Forward Resistance +20 mA / 1 GHz 4 4.9 Forward Voltage +10 mA V 1.2 1.36 1.5 Leakage Current -40 V nA 50 300 Minority Carrier Lifetime ns 5 10 Absolute Maximum Ratings T = 25C A Handling and Assembly Procedures (unless otherwise specified) The following precautions should be observed to avoid damaging these devices. Parameter Absolute Maximum Cleanliness Reverse Voltage -50 V These devices should be handled in a clean environment. Forward DC Current 40 mA Static Sensitivity C.W. Incident Power 23 dBm Aluminum Gallium Arsenide PIN diodes are Class 0, HBM, ESD sensitive and can be damaged by static Junction Temperature +175C electricity. Proper ESD techniques should be used Operating Temperature -65C to +125C when handling these devices. Storage Temperature -65C to +150C General Handling These devices have a polymer layer which provides Mounting Temperature +235C for 10 seconds scratch protection for the junction area and the anode air bridge. Beam lead devices must, however, be handled with extreme care since the leads may easily be distorted or broken by the normal pressures exerted when handled with tweezers. A vacuum pencil with a 27 tip is recommended for picking and placing. Attachment These devices were designed to be inserted onto hard or soft substrates. Recommended methods of attachment include thermo-compression bonding, parallel-gap welding and electrically conductive silver epoxy. 22 2 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: h t t p s: //www.m a co m .co m /su p p o rt DC-0007014

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
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M/A-COM
M/A-COM / TYCO
M/A-COM Technology Solutions
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