Product Information

RPI-124

RPI-124 electronic component of ROHM

Datasheet
Optical Switches, Transmissive, Phototransistor Output PHOTOINTERRUPTER ULTRA MIN; HIGH RES

Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.472 ea
Line Total: USD 1.47

3315 - Global Stock
Ships to you between
Thu. 09 May to Mon. 13 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
5245 - Global Stock


Ships to you between Thu. 09 May to Mon. 13 May

MOQ : 1
Multiples : 1

Stock Image

RPI-124
ROHM

1 : USD 1.472
10 : USD 1.1465
100 : USD 0.7958
500 : USD 0.6888
1000 : USD 0.6371
2000 : USD 0.5175
24000 : USD 0.5048

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Output Device
Slot Width
Aperture Width
Collector- Emitter Voltage VCEO Max
Maximum Collector Current
Forward Current
Maximum Operating Temperature
Minimum Operating Temperature
Series
Packaging
If - Forward Current
Sensing Method
Wavelength
Brand
Power Dissipation
Fall Time
Rise Time
Factory Pack Quantity :
Height
Output Type
Number Of Channels
Cnhts
Hts Code
Mxhts
Pd - Power Dissipation
Product Type
Subcategory
Taric
Vr - Reverse Voltage
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2-R0.3 External dimensions (Unit : mm) RPI-124 Through hole Photointerrupter, Ultraminiature type 3 4 (bottom) 4-0.8 Absolute maximum ratings (Ta=25C) Applications Parameter Symbol Limits Unit Forward current IF 50 mA Optical control equipment Cameras Reverse voltage VR 5 V Floppy disk drives 3.9 Power dissipation PD 80 mW Cross-section A-A 0.150.1 Gap 1 Collector-emitter voltage VCEO 30 V Features A Emitter-collector voltage VECO 4.5 V 1) Ultra-small. Collector current IC 30 mA Optical axis center 2) High-precision position detection Collector power dissipation PC 80 mW (slit width = 0.15mm). Operating temperature Topr 25 to +85 C 3) Minimal influence from stray light. 4) Low collector-emitter saturation voltage. Storage temperature Tstg 30 to +100 C Max.0.3 A 4-0.5 Electrical and optical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions 4-0.2 4-0.4 Forward voltage VF 1.3 1.6 VIF=50mA (3) Reverse current 10 V IR A R=5V (2) Dark current ICEO 0.5 A VCE=10V Peak sensitivity wavelength P 800 nm Collector current IC 0.3 1.5 mA VCE=5V, IF=20mA Anode Collector Collector-emitter saturation VCE(sat) 0.3 V IF=20mA, IC=0.15mA voltage Response time tr tf 10 s VCC=5V, IF=20mA, RL=100 fC Cut-off frequency 1 MHz IF=50mA Non-coherent Infrared light emitting diode used. Cathode Emitter Peak light emitting wavelength P 950 nm Notes: VCC=5V, IC=1mA, RL=100 tr tf s Response time 10 This product is not designed to be protected against electromagnetic wave. 1. Unspecified tolerance shall be 0.2 . P nm Maximum sensitivity wavelength 800 2. Dimension in parenthesis are show for reference. Electrical and optical characteristics curves 125 5 100 VCE=5V 5050 1000 25C 50 100 4 0C 4040 d 25C 100 40 RL=1k VCE=30V 3 75 50C VCE=20V 3030 VCE=10V 30 75C 10 RL=500 10 50 2 2020 20 1 RL=100 25 1 1010 10 0.1 00 1 0 0 0 0.20.2 0.40.4 0.60.6 0.80.8 1.01.0 1.21.2 1.41.4 1.61.6 1.81.8 0 1 2 3 4 5 20 0 20 40 60 80 100 010 20 30 40 50 0.05 0.1 1 10 25 0 25 50 75 100 DISTANCE : d (mm) AMBIENT TEMPERATURE : Ta (C) FORWARD VOLTAGE : VF (V) FORWARD CURRENT : IF (mA) COLLECTOR CURRENT : Ic (mA) AMBIENT TEMPERATURE : Ta (C) Fig.1 Relative output current vs. Fig.3 Forward current vs. forward Fig.7 Collector current vs. Fig.8 Response time vs. Fig.9 Dark current vs. distance ( ) Fig.2 Forward current falloff voltage forward current collector current ambient temperature 100 160 125 Input VCC 2.5 140 IF=50mA PD PC 80 100 120 2 40mA Input 100 60 75 30mA Output 1.5 90% 80 RL 20mA 40 10% 50 Output 60 1 td 40 tr tf 10mA 20 25 0.5 td : Delay time 20 Rise time (time for output current to rise from t r : 0 0 10% to 90% of peak current) 0 0 0 1 2 3 4 5 25 0 25 50 75 85 100 40 20 0 20406080 100 042 6 810 t f : Fall time (time for output current to fall from 90% DISTANCE : d (mm) AMBIENT TEMPERATURE : Ta (C) AMBIENT TEMPERATURE : Ta (C) COLLECTOR TO EMITTER VOLTAGE : VCE (V) to 10% of peak current) Fig.4 Relative output current vs. Fig.5 Power dissipation / collector power Fig.6 Relative output vs. ambient distance ( ) dissipation vs. ambient temperature Fig.10 Output characteristics Fig.11 Response time measurement circuit temperature C0.7 Infrared Transfer Output Input Output Photo light charac- charac- charac- photo- Input(LED) emitter transistor teristics teristics teristics ( ) diode transistor RELATIVE COLLECTOR CURRENT : Ic (%) RELATIVE COLLECTOR CURRENT : Ic (%) d POWER DISSIPATION / COLLECTOR POWER DISSIPATION : PD / Pc (mW) FORWARD CURRENT : IF (mA) RELATIVE COLLECTOR CURRENT : Ic (%) FORWARD CURRENT : IF (mA) COLLECTOR CURRENT : Ic (mA) COLLECTOR CURRENT : Ic (mA) 2.50.5 3.3 2.3 2.6 1 RESPONSE TIME : t (s) 2 (1.5) DARK CURRENT : ID (nA) Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party s intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer s right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies toobjectiv criteria or aninforme (by MITI clause) on the basis ofcatch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1

Tariff Desc

8541.40.00 54 No .Light emitting diodes (LED), LED displays, optocouplers, photosensitive transistors and diodes, infra-red and fibre optic emitters and detectors Free

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS; LIGHT-EMITTING DIODES (LED); MOUNTED PIEZO-ELECTRIC CRYSTALS:
LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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