RQ6E060ATTCR ROHM

RQ6E060ATTCR electronic component of ROHM
RQ6E060ATTCR ROHM
RQ6E060ATTCR MOSFETs
RQ6E060ATTCR  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of RQ6E060ATTCR MOSFETs across the USA, India, Europe, Australia, and various other global locations. RQ6E060ATTCR MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. RQ6E060ATTCR
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET PCH -30V -6A MIDDLE POWER
Datasheet: RQ6E060ATTCR Datasheet (PDF)
Price (USD)
1: USD 1.12 ea
Line Total: USD 1.12 
Availability : 3608
  
Ship by Wed. 12 Nov to Fri. 14 Nov
QtyUnit Price
1$ 1.12
10$ 0.7537
100$ 0.4565
500$ 0.3685
1000$ 0.3388
3000$ 0.2893
6000$ 0.2882
9000$ 0.2871

Availability 3608
Ship by Wed. 12 Nov to Fri. 14 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.12
10$ 0.7537
100$ 0.4565
500$ 0.3685
1000$ 0.3388
3000$ 0.2893
6000$ 0.2882
9000$ 0.2871

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the RQ6E060ATTCR from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RQ6E060ATTCR and other electronic components in the MOSFETs category and beyond.

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RQ6E060AT Datasheet Pch -30V -6A Middle Power MOSFET llOutline SOT-457T V -30V DSS SC-95 R (Max.) 26.4m DS(on) TSMT6 I 6.0A D P 1.25W D llInner circuit llFeatures 1) Low on - resistance. 2) High Power small mold Package (TSMT6). 3) Pb-free lead plating RoHS compliant. 4) Halogen Free. 5) 100% Rg and UIS tested. llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Quantity (pcs) 3000 Load switch Taping code TCR Marking JY llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit V Drain - Source voltage -30 V DSS *1 Continuous drain current I 6.0 A D *2 I Pulsed drain current 18 A DP V Gate - Source voltage 20 V GSS *3 Avalanche current, single pulse I -6.0 A AS *3 E Avalanche energy, single pulse 26 mJ AS *4 P 1.25 W D Power dissipation *5 P 0.95 W D Junction temperature T 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 2019 ROHM Co., Ltd. All rights reserved. 1/11 20190527 - Rev.002 RQ6E060AT Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *4 R - - 100 /W thJA Thermal resistance, junction - ambient *5 R - - 132 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -30 - - V (BR)DSS GS D voltage V I = -1mA (BR)DSS D Breakdown voltage - -22 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = -30V, V = 0V - - -1 A DSS DS GS drain current I V = 20V, V = 0V Gate - Source leakage current - - 100 nA GSS GS DS V V = V , I = -1mA Gate threshold voltage -1.0 - -2.5 V GS(th) DS GS D V I = -1mA GS(th) D Gate threshold voltage - 2.9 - mV/ temperature coefficient T referenced to 25 j V = -10V, I = -6A - 20.3 26.4 GS D Static drain - source *6 R m DS(on) on - state resistance V = -4.5V, I = -6A - 26.8 34.6 GS D R Gate resistance f = 1MHz, open drain - 4.6 - G Forward Transfer *6 Y V = -5V, I = -6A 4.7 - - S fs DS D Admittance *1 Limited only by maximum temperature allowed. *2 Pw 10s, Duty cycle 1% *3 L 1.0mH, V = -15V, R = 25, STARTING T = 25 Fig.3-1,3-2 DD G j *4 Mounted on a ceramic boad (30300.8mm) *5 Mounted on a FR4 (25250.8mm) *6 Pulsed www.rohm.com 2/11 20190527 - Rev.002 2019 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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