RS1G120MNTB ROHM

RS1G120MN Datasheet Nch 40V 34A Power MOSFET llOutline V 40V DSS R (Max.) 16.2m DS(on) HSOP8 I 34A D P 25W D llInner circuit llFeatures 1) Low on - resistance 2) High power small mold package (HSOP8) 3) Pb-free lead plating RoHS compliant 4) Halogen free 5) 100% Rg and UIS tested llPackaging specifications Embossed Packing Tape Reel size (mm) 330 llApplication Tape width (mm) 12 Type Switching Basic ordering unit (pcs) 2500 Taping code TB Marking RS1G120MN llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V 40 V DSS *1 T = 25C I 34 A c D Continuous drain current T = 25C I 12 A a D *2 I Pulsed drain current 48 A DP V Gate - Source voltage 20 V GSS *3 I Avalanche current, single pulse 12 A AS *3 E Avalanche energy, single pulse 11 mJ AS *1 P 25 W D Power dissipation *4 P 3.0 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 2019 ROHM Co., Ltd. All rights reserved. 1/10 20190301 - Rev.003 RS1G120MN Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *1 R Thermal resistance, junction - case - - 5.0 /W thJC *4 R Thermal resistance, junction - ambient - - 41.7 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 40 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS Breakdown voltage D - 27.3 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 40V, V = 0V - - 1 A DSS DS GS drain current I Gate - Source leakage current V = 20V, V = 0V - - 100 nA GSS GS DS Gate threshold voltage V V = 10V, I = 1mA 1.0 - 2.5 V GS(th) DS D V I = 1mA GS(th) Gate threshold voltage D - -4.6 - mV/ temperature coefficient T referenced to 25 j V = 10V, I = 12A - 11.6 16.2 GS D Static drain - source *5 R m DS(on) on - state resistance V = 4.5V, I = 12A - 15.6 20.7 GS D Gate resistance R f=1MHz, open drain - 3.4 - G Forward Transfer *5 Y V = 10V, I = 12A 4 - - S fs DS D Admittance *1 T =25 , Limited only by maximum temperature allowed. c *2 Pw10s , Duty cycle 1% *3 L 0.1mH, V = 20V, R = 25, Starting T = 25 Fig.3-1,3-2 DD G j *4 Mounted on a Cu board (40400.8mm) *5 Pulsed www.rohm.com 2/10 20190301 - Rev.003 2019 ROHM Co., Ltd. All rights reserved.