Product Information

RS1G120MNTB

RS1G120MNTB electronic component of ROHM

Datasheet
ROHM Semiconductor MOSFET

Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.5517 ea
Line Total: USD 0.55

6942 - Global Stock
Ships to you between
Fri. 31 May to Tue. 04 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
26 - WHS 1


Ships to you between
Mon. 03 Jun to Thu. 06 Jun

MOQ : 1
Multiples : 1
1 : USD 0.4974
10 : USD 0.4504
30 : USD 0.4242
100 : USD 0.3949
500 : USD 0.3812
1000 : USD 0.376

6942 - WHS 2


Ships to you between Fri. 31 May to Tue. 04 Jun

MOQ : 1
Multiples : 1
1 : USD 0.5517
10 : USD 0.4817
100 : USD 0.3394
500 : USD 0.2729
1000 : USD 0.2278
2500 : USD 0.1969
10000 : USD 0.1969
25000 : USD 0.1922
50000 : USD 0.1875

4801 - WHS 3


Ships to you between Mon. 27 May to Fri. 31 May

MOQ : 151
Multiples : 1
151 : USD 0.2619
200 : USD 0.2603
500 : USD 0.2465
1000 : USD 0.2415

307 - WHS 4


Ships to you between Mon. 27 May to Fri. 31 May

MOQ : 252
Multiples : 1
252 : USD 0.41

1906 - WHS 5


Ships to you between Mon. 27 May to Fri. 31 May

MOQ : 252
Multiples : 1
252 : USD 0.3824

2371 - WHS 6


Ships to you between Mon. 27 May to Fri. 31 May

MOQ : 252
Multiples : 1
252 : USD 0.3824

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Height
Length
Product
Width
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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RS1G120MN Datasheet Nch 40V 34A Power MOSFET llOutline V 40V DSS R (Max.) 16.2m DS(on) HSOP8 I 34A D P 25W D llInner circuit llFeatures 1) Low on - resistance 2) High power small mold package (HSOP8) 3) Pb-free lead plating RoHS compliant 4) Halogen free 5) 100% Rg and UIS tested llPackaging specifications Embossed Packing Tape Reel size (mm) 330 llApplication Tape width (mm) 12 Type Switching Basic ordering unit (pcs) 2500 Taping code TB Marking RS1G120MN llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V 40 V DSS *1 T = 25C I 34 A c D Continuous drain current T = 25C I 12 A a D *2 I Pulsed drain current 48 A DP V Gate - Source voltage 20 V GSS *3 I Avalanche current, single pulse 12 A AS *3 E Avalanche energy, single pulse 11 mJ AS *1 P 25 W D Power dissipation *4 P 3.0 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 2019 ROHM Co., Ltd. All rights reserved. 1/10 20190301 - Rev.003 RS1G120MN Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *1 R Thermal resistance, junction - case - - 5.0 /W thJC *4 R Thermal resistance, junction - ambient - - 41.7 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 40 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS Breakdown voltage D - 27.3 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 40V, V = 0V - - 1 A DSS DS GS drain current I Gate - Source leakage current V = 20V, V = 0V - - 100 nA GSS GS DS Gate threshold voltage V V = 10V, I = 1mA 1.0 - 2.5 V GS(th) DS D V I = 1mA GS(th) Gate threshold voltage D - -4.6 - mV/ temperature coefficient T referenced to 25 j V = 10V, I = 12A - 11.6 16.2 GS D Static drain - source *5 R m DS(on) on - state resistance V = 4.5V, I = 12A - 15.6 20.7 GS D Gate resistance R f=1MHz, open drain - 3.4 - G Forward Transfer *5 Y V = 10V, I = 12A 4 - - S fs DS D Admittance *1 T =25 , Limited only by maximum temperature allowed. c *2 Pw10s , Duty cycle 1% *3 L 0.1mH, V = 20V, R = 25, Starting T = 25 Fig.3-1,3-2 DD G j *4 Mounted on a Cu board (40400.8mm) *5 Pulsed www.rohm.com 2/10 20190301 - Rev.003 2019 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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