X-On Electronics has gained recognition as a prominent supplier of RS1G120MNTB MOSFETs across the USA, India, Europe, Australia, and various other global locations. RS1G120MNTB MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RS1G120MNTB ROHM

RS1G120MNTB electronic component of ROHM
RS1G120MNTB ROHM
RS1G120MNTB MOSFETs
RS1G120MNTB  Semiconductors

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See Product Specifications
Part No. RS1G120MNTB
Manufacturer: ROHM
Category: MOSFETs
Description: ROHM Semiconductor MOSFET
Datasheet: RS1G120MNTB Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
157: USD 1.66 ea
Line Total: USD 260.62 
Availability - 0
MOQ: 157  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 09 May to Thu. 15 May
MOQ : 5
Multiples : 1
5 : USD 0.9635
10 : USD 0.5908
100 : USD 0.3941
500 : USD 0.3053
1000 : USD 0.2347

0
Ship by Fri. 16 May to Wed. 21 May
MOQ : 1
Multiples : 1
1 : USD 0.5238
10 : USD 0.4743
30 : USD 0.4466
100 : USD 0.4157
500 : USD 0.4014
1000 : USD 0.396

0
Ship by Wed. 07 May to Fri. 09 May
MOQ : 1
Multiples : 1
1 : USD 0.8663
10 : USD 0.54
100 : USD 0.322
500 : USD 0.2519
1000 : USD 0.2277
2500 : USD 0.1837
10000 : USD 0.1815
25000 : USD 0.1738

0
Ship by Fri. 09 May to Thu. 15 May
MOQ : 157
Multiples : 1
157 : USD 1.66

0
Ship by Fri. 09 May to Thu. 15 May
MOQ : 97
Multiples : 1
97 : USD 1.1467

0
Ship by Fri. 09 May to Thu. 15 May
MOQ : 161
Multiples : 1
161 : USD 0.9555

0
Ship by Fri. 09 May to Thu. 15 May
MOQ : 209
Multiples : 1
209 : USD 0.5095
250 : USD 0.489
500 : USD 0.4714
1000 : USD 0.4385

0
Ship by Fri. 09 May to Thu. 15 May
MOQ : 209
Multiples : 1
209 : USD 0.5095
250 : USD 0.489
500 : USD 0.4714
1000 : USD 0.4385

0
Ship by Fri. 09 May to Thu. 15 May
MOQ : 285
Multiples : 1
285 : USD 0.3473

0
Ship by Fri. 09 May to Thu. 15 May
MOQ : 285
Multiples : 1
285 : USD 0.3473
500 : USD 0.3347
1000 : USD 0.3237

0
Ship by Fri. 09 May to Thu. 15 May
MOQ : 285
Multiples : 1
285 : USD 0.3473
500 : USD 0.3347
1000 : USD 0.3237

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
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Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Transistor Type
Brand
Forward Transconductance - Min
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Rise Time
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the RS1G120MNTB from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RS1G120MNTB and other electronic components in the MOSFETs category and beyond.

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RS1G120MN Datasheet Nch 40V 34A Power MOSFET llOutline V 40V DSS R (Max.) 16.2m DS(on) HSOP8 I 34A D P 25W D llInner circuit llFeatures 1) Low on - resistance 2) High power small mold package (HSOP8) 3) Pb-free lead plating RoHS compliant 4) Halogen free 5) 100% Rg and UIS tested llPackaging specifications Embossed Packing Tape Reel size (mm) 330 llApplication Tape width (mm) 12 Type Switching Basic ordering unit (pcs) 2500 Taping code TB Marking RS1G120MN llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V 40 V DSS *1 T = 25C I 34 A c D Continuous drain current T = 25C I 12 A a D *2 I Pulsed drain current 48 A DP V Gate - Source voltage 20 V GSS *3 I Avalanche current, single pulse 12 A AS *3 E Avalanche energy, single pulse 11 mJ AS *1 P 25 W D Power dissipation *4 P 3.0 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 2019 ROHM Co., Ltd. All rights reserved. 1/10 20190301 - Rev.003 RS1G120MN Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *1 R Thermal resistance, junction - case - - 5.0 /W thJC *4 R Thermal resistance, junction - ambient - - 41.7 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 40 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS Breakdown voltage D - 27.3 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 40V, V = 0V - - 1 A DSS DS GS drain current I Gate - Source leakage current V = 20V, V = 0V - - 100 nA GSS GS DS Gate threshold voltage V V = 10V, I = 1mA 1.0 - 2.5 V GS(th) DS D V I = 1mA GS(th) Gate threshold voltage D - -4.6 - mV/ temperature coefficient T referenced to 25 j V = 10V, I = 12A - 11.6 16.2 GS D Static drain - source *5 R m DS(on) on - state resistance V = 4.5V, I = 12A - 15.6 20.7 GS D Gate resistance R f=1MHz, open drain - 3.4 - G Forward Transfer *5 Y V = 10V, I = 12A 4 - - S fs DS D Admittance *1 T =25 , Limited only by maximum temperature allowed. c *2 Pw10s , Duty cycle 1% *3 L 0.1mH, V = 20V, R = 25, Starting T = 25 Fig.3-1,3-2 DD G j *4 Mounted on a Cu board (40400.8mm) *5 Pulsed www.rohm.com 2/10 20190301 - Rev.003 2019 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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