X-On Electronics has gained recognition as a prominent supplier of RS1E180BNTB mosfet across the USA, India, Europe, Australia, and various other global locations. RS1E180BNTB mosfet are a product manufactured by ROHM. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

RS1E180BNTB ROHM

RS1E180BNTB electronic component of ROHM
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See Product Specifications
Part No.RS1E180BNTB
Manufacturer: ROHM
Category:MOSFET
Description: N-Channel 30 V 60A (Tc) 3W (Ta), 25W (Tc) Surface Mount CPT3
Datasheet: RS1E180BNTB Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.6222 ea
Line Total: USD 0.62

Availability - 80
Ships to you between
Thu. 13 Jun to Mon. 17 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
80 - WHS 1


Ships to you between Thu. 13 Jun to Mon. 17 Jun

MOQ : 1
Multiples : 1
1 : USD 0.6222
10 : USD 0.5325
100 : USD 0.3749
500 : USD 0.3013
1000 : USD 0.2519
2500 : USD 0.2196
10000 : USD 0.2174
25000 : USD 0.2139
50000 : USD 0.2105

2289 - WHS 2


Ships to you between Fri. 07 Jun to Thu. 13 Jun

MOQ : 179
Multiples : 1
179 : USD 0.5944
250 : USD 0.5706
500 : USD 0.5499
1000 : USD 0.532

     
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the RS1E180BNTB from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RS1E180BNTB and other electronic components in the MOSFET category and beyond.

RS1E180BN Datasheet Nch 30V 60A Middle Power MOSFET llOutline V 30V DSS R (Max.) 4.9m DS(on) HSOP8 I 60A D P 25W D llInner circuit llFeatures 1) Low on - resistance. 2) High Power small mold Package (HSOP8). 3) Pb-free lead plating RoHS compliant. 4) Halogen Free. llPackaging specifications Embossed Packing Tape Reel size (mm) 330 llApplication Tape width (mm) 12 Type Switching Quantity (pcs) 2500 Taping code TB Marking RS1E180BN llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V 30 V DSS *1 T = 25C I 60 A c D Continuous drain current T = 25C I 18 A a D *2 I Pulsed drain current 72 A DP V Gate - Source voltage 20 V GSS *3 I Avalanche current, single pulse 18 A AS *3 E Avalanche energy, single pulse 23.5 mJ AS *1 P 25 W D Power dissipation *4 P 3.0 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 2019 ROHM Co., Ltd. All rights reserved. 1/10 20190527 - Rev.003 RS1E180BN Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *1 R Thermal resistance, junction - case - - 5.0 /W thJC *4 R Thermal resistance, junction - ambient - - 41.7 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 30 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS Breakdown voltage D - 21 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 30V, V = 0V - - 1 A DSS DS GS drain current Gate - Source leakage current I V = 16V, V = 0V - - 100 nA GSS GS DS V Gate threshold voltage V = 10V, I = 1mA 1.0 - 2.5 V GS(th) DS D V I = 1mA GS(th) D Gate threshold voltage - -3 - mV/ temperature coefficient T referenced to 25 j V = 10V, I = 18A - 3.5 4.9 GS D Static drain - source *4 R m DS(on) on - state resistance V = 4.5V, I = 18A - 4.9 6.9 GS D R Gate resistance f=1MHz, open drain - 1.7 - G Forward Transfer *4 Y V = 5V, I = 18A 12 - - S fs DS D Admittance *1Tc=25 , Limited only by maximum temperature allowed. *2 Pw 10s, Duty cycle 1% *3 L 0.1mH, V = 15V, R = 25, Starting T = 25 Fig.3-1,3-2 DD G j *4 Mounted on a Cu Board (40400.8mm) *5 Pulsed www.rohm.com 2/10 20190527 - Rev.003 2019 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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