X-On Electronics has gained recognition as a prominent supplier of RS1E350BNTB MOSFETs across the USA, India, Europe, Australia, and various other global locations. RS1E350BNTB MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RS1E350BNTB ROHM

RS1E350BNTB electronic component of ROHM
RS1E350BNTB ROHM
RS1E350BNTB MOSFETs
RS1E350BNTB  Semiconductors

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See Product Specifications
Part No. RS1E350BNTB
Manufacturer: ROHM
Category: MOSFETs
Description: N-Channel 30 V 35A (Ta) 35W (Tc) Surface Mount 8-HSOP
Datasheet: RS1E350BNTB Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.7875 ea
Line Total: USD 1.79 
Availability - 2745
Ship by Wed. 07 May to Fri. 09 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2745
Ship by Wed. 07 May to Fri. 09 May
MOQ : 1
Multiples : 1
1 : USD 1.7875
10 : USD 1.344
25 : USD 1.242
100 : USD 0.9856
250 : USD 0.9845
500 : USD 0.8569
1000 : USD 0.8107
2500 : USD 0.803
5000 : USD 0.7711

2425
Ship by Fri. 09 May to Thu. 15 May
MOQ : 149
Multiples : 1
149 : USD 1.7416

770
Ship by Fri. 09 May to Thu. 15 May
MOQ : 223
Multiples : 1
223 : USD 1.1644
234 : USD 1.1124
250 : USD 1.0678
500 : USD 0.9896

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Series
Brand
Factory Pack Quantity :
Configuration
Transistor Type
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the RS1E350BNTB from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RS1E350BNTB and other electronic components in the MOSFETs category and beyond.

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RS1E350BN Datasheet Nch 30V 80A Power MOSFET llOutline V 30V DSS R (Max.) 1.7m DS(on) HSOP8 I 80A D P 35W D llInner circuit llFeatures 1) Low on - resistance 2) High power package (HSOP8) 3) Pb-free lead plating RoHS compliant 4) Halogen Free 5) 100% Rg and UIS tested llPackaging specifications Embossed Packing Tape Reel size (mm) 330 llApplication Tape width (mm) 12 Type Switching Quantity (pcs) 2500 Taping code TB Marking RS1E350BN llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V 30 V DSS *1 T = 25C I 80 A c D Continuous drain current T = 25C I 35 A a D *2 I Pulsed drain current 140 A DP V Gate - Source voltage 20 V GSS *3 I Avalanche current, single pulse 35 A AS *3 E Avalanche energy, single pulse 89 mJ AS *1 P 35 W D Power dissipation *4 P 3.0 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 2019 ROHM Co., Ltd. All rights reserved. 1/10 20190527 - Rev.003 RS1E350BN Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *1 R Thermal resistance, junction - case - - 3.57 /W thJC *4 R Thermal resistance, junction - ambient - - 41.7 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 30 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS Breakdown voltage D - 21 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 30V, V = 0V - - 1 A DSS DS GS drain current I Gate - Source leakage current V = 16V, V = 0V - - 100 nA GSS GS DS Gate threshold voltage V V = 10V, I = 1mA 1.0 - 2.5 V GS(th) DS D V I = 1mA GS(th) Gate threshold voltage D - -3 - mV/ temperature coefficient T referenced to 25 j V = 10V, I = 35A - 1.2 1.7 GS D Static drain - source *5 R m DS(on) on - state resistance V = 4.5V, I = 35A - 1.8 2.5 GS D Gate resistance R f=1MHz, open drain - 1.4 - G Forward Transfer *5 Y V = 5V, I = 35A 30 - - S fs DS D Admittance *1 T =25 , Limited only by maximum temperature allowed. c *2 Pw 10s, Duty cycle 1% *3 L 0.1mH, V = 15V, R = 25, Starting T = 25 Fig.3-1,3-2 DD G j *4 Mounted on a Cu board (40400.8mm) *5 Pulsed www.rohm.com 2/10 20190527 - Rev.003 2019 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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